Journal of Electrical Engineering and Technology

  • 제7권5호
  • /
  • Pages.784-788
  • /
  • 2012
  • /
  • 1975-0102(pISSN)
  • /
  • 2093-7423(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지
DOI QR코드

DOI QR Code

High-Performance Optical Gating in Junction Device based on Vanadium Dioxide Thin Film Grown by Sol-Gel Method

  • Lee, Yong-Wook (School of Electrical Engineering, Pukyong National University) ;
  • Kim, Eung-Soo (Division of Digital Media Engineering, Pusan University of Foreign Studies) ;
  • Shin, Bo-Sung (Engineering Research for Net Shape and Die Manufacturing, Pusan National University) ;
  • Lee, Sang-Mae (MEMS/NANO Fabrication Center)
  • 투고 : 2011.06.27
  • 심사 : 2012.05.30
  • 발행 : 2012.09.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide ($VO_2$) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the $VO_2$ film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the $VO_2$ thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.

키워드

참고문헌

  1. F. J. Morin, "Oxides which show a metal-to-insulator transition at the neel temperature," Phys. Rev. Lett., vol. 3, pp. 34-36, 1959. https://doi.org/10.1103/PhysRevLett.3.34
  2. E. Arcangeletti, L. Baldassarre, D. D. Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, "Evidence of a pressure-induced metallization process in monoclinic $VO_2$," Phys. Rev. Lett., vol. 98, pp. 196406(1-4), 2007.
  3. A. Cavalleri, Cs. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, "Femtosecond structural dynamics in $VO_2$ during an ultrafast solidsolid phase transition," Phys. Rev. Lett., vol. 87, pp. 237401(1-4), 2001.
  4. H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, "Mechanism and observation of Mott transition in $VO_2$-based two- and three-terminal devices," N. J. Phys., vol. 6, pp. 52-70, 2004. https://doi.org/10.1088/1367-2630/6/1/052
  5. S. Lysenko, A. J. Rua, V. Vikhnin, J. Jimenez, F. Fernandez, and H. Liu, "Light-induced ultrafast phase transitions in $VO_2$ thin film," Appl. Surf. Sci., vol. 252, pp. 5512-5515, 2006. https://doi.org/10.1016/j.apsusc.2005.12.137
  6. S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, and C. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Tech., vol. 45, pp. 239-242, 2004. https://doi.org/10.1016/j.infrared.2003.11.005
  7. C. Chen, X. Yi, X. Zhao, and B. Xiong, "Characterizations of $VO_2$-based uncooled microbolometer linear array," Sens. Actuators A, vol. 90, pp. 212-214, 2001. https://doi.org/10.1016/S0924-4247(01)00495-2
  8. C. Chen and Z. Zhou, "Optical phonons assisted infrared absorption in $VO_2$ based bolometer," Appl. Phys. Lett., vol. 91, pp. 011107(1-3), 2007.
  9. B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, and Y.-S. Lim, "Temperature dependence of the first-order metal-insulator transition in $VO_2$ and programmable critical temperature sensor," Appl. Phys. Lett., vol. 90, pp. 023515(1-3), 2007.
  10. C.-R. Cho, S. Cho, S. Vadim, R. Jung, and I. Yoo, "Current-induced metal-insulator transition in $VO_x$ thin film prepared by rapid-thermal-annealing," Thin Solid Films, vol. 495, pp. 375-379, 2006. https://doi.org/10.1016/j.tsf.2005.08.241
  11. Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, "Photo-assisted electrical gating in a twoterminal device based on vanadium dioxide thin film," Opt. Express, vol. 15, pp. 12108-12113, 2007. https://doi.org/10.1364/OE.15.012108
  12. B.-G. Chae, H.-T. Kim, S. J. Yun, Y. W. Lee, B.-J. Kim, D.-H. Youn, and K.-Y. Kang, "Highly oriented $VO_2$ thin films prepared by sol-gel deposition," Electrochem. Solid-State Lett., vol. 9, pp. C12-C14, 2006. https://doi.org/10.1149/1.2135430
  13. Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, "Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film," Appl. Phys. Lett., vol. 92, pp. 162903(1-3), 2008.

피인용 문헌

  1. Bidirectional Current Triggering in Two-Terminal Planar Device Based on Highly Resistive Vanadium Dioxide Thin Film Using 966nm Near Infrared Laser vol.29, pp.11, 2015, https://doi.org/10.5207/JIEIE.2015.29.11.028
  2. Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode vol.68, pp.2, 2016, https://doi.org/10.3938/jkps.68.323
  3. Bidirectional laser triggering of planar device based on vanadium dioxide thin film vol.22, pp.8, 2014, https://doi.org/10.1364/OE.22.009016
  4. Thermally- or optically-biased memristive switching in two-terminal VO2 devices vol.14, pp.9, 2014, https://doi.org/10.1016/j.cap.2014.06.015
  5. Study on Current Switching in Electronic Devices Based on Vanadium Dioxide Thin Films Using CO2Laser vol.30, pp.1, 2016, https://doi.org/10.5207/JIEIE.2016.30.1.001
  6. Blue- and red-shifts of V2O5 phonons in NH3 environment by in situ Raman spectroscopy vol.51, pp.1, 2018, https://doi.org/10.1088/1361-6463/aa98fe
  7. Modulators Using Hybrid Plasmonics vol.36, pp.3, 2018, https://doi.org/10.1109/JLT.2017.2782707