Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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High-Performance Optical Gating in Junction Device based on Vanadium Dioxide Thin Film Grown by Sol-Gel Method

  • Lee, Yong-Wook (School of Electrical Engineering, Pukyong National University) ;
  • Kim, Eung-Soo (Division of Digital Media Engineering, Pusan University of Foreign Studies) ;
  • Shin, Bo-Sung (Engineering Research for Net Shape and Die Manufacturing, Pusan National University) ;
  • Lee, Sang-Mae (MEMS/NANO Fabrication Center)
  • Received : 2011.06.27
  • Accepted : 2012.05.30
  • Published : 2012.09.01
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Abstract

In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide ($VO_2$) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the $VO_2$ film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the $VO_2$ thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.

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References

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