DOI QR코드

DOI QR Code

급속 열처리 방법에 의한 Al-doped Zinc Oxide (AZO) Films의 제조 및 특성 평가

Preparation and Evaluation of the Properties of Al-doped Zinc Oxide (AZO) Films Deposition by Rapid Thermal Annealing

  • 김성진 (연세대학교 신소재공학과) ;
  • 최균 (한국세라믹기술원 엔지니어링 세라믹센터) ;
  • 최세영 (연세대학교 신소재공학과)
  • Kim, Sung-Jin (Department of Advanced Materials Science and Engineering, Yonsei University) ;
  • Choi, Kyoon (Ceramic Engineering Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Choi, Se-Young (Department of Advanced Materials Science and Engineering, Yonsei University)
  • 투고 : 2012.04.16
  • 심사 : 2012.06.15
  • 발행 : 2012.07.01

초록

In this study, transparent conducting Al-doped Zinc Oxide (AZO) films with a thickness of 150 nm were prepared on corning glass substrate by the RF magnetron sputtering with using a Al-doped zinc oxide (AZO), ($Al_2O_3$: 2 wt%) target at room temperature. This study investigated the effect of rapid thermal annealing temperature and oxygen ambient on structural, electrical and optical properties of Al-doped zinc oxide (AZO) thin films. The films were annealed at temperatures ranging from 400 to $700^{\circ}C$ by using Rapid thermal equipment in oxygen ambient. The effect of RTA treatment on the structural properties were studied by x-ray diffraction and atomic force microscopy. It is observed that the Al-doped zinc oxide (AZO) thin film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas reveals the strongest XRD emission intensity and narrowest full width at half maximum among the temperature studied. The enhanced UV emission from the film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas is attributed to the improved crystalline quality of Al-doped zinc oxide (AZO) thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size.

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