참고문헌
- K.S. Son, J.S. Jung, K.H. Lee, T.S. Kim, J.S. Park, K.C. Park, J.Y. Kwon, B. Koo, and S.Y. Lee, "Highly stable double gate Ga-In-Zn-O thin film transistor," IEEE Electron Device Lett. vol. 31, no. 8, pp. 812-814, 2010 https://doi.org/10.1109/LED.2010.2050294
- J.S. Park, T.S. Kim, K.S. Son, J.S. Jung, K.H. Lee, J.Y. Kwon, B. Koo, and S. Lee, "Influence of illumination on the nega-tive-bias stability of transparent hafnium-indium-zinc oxide thin-film transistors," IEEE Electron Device Lett. vol. 31, no. 5, pp. 440-442, 2010 https://doi.org/10.1109/LED.2010.2043050
- K.H. Ji, J.I. Kim, Y.G. Mo, J.H. Jeong, S. Yang, C.S. Hwang, S.H. Park, M.K. Ryu, S.Y. Lee, and J.K. Jeong, "Comparative study on light-induced bias stress instability of IGZO transistors with SiNx and SiO2 gate dielectrics," IEEE Electron Device Lett. vol.31, no.12, pp.1404-1406, 2010 https://doi.org/10.1109/LED.2010.2073439
- J.M. Lee, I.T. Cho, J.H. Lee, and H.I. Kwon, "Bias stress induced stretched exponential time dependence of threshold voltage shit in InGaZnO thin film transistors," Appl. Phys. Lett. vol. 93, p.093504, 2008 https://doi.org/10.1063/1.2977865
- M.E. Lopes, H.L. Gomes, M.C.R. MedeI- ros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira, "Gate-bias stress in amorphous oxide semiconductor thin-film transistors,"Appl. Phys. Let. vol.95, p.063502, 2009 https://doi.org/10.1063/1.3187532
- K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, "Origin of threshold voltage shifts in room temperature deposited and annealed a-In-Ga-Zn-O thin film transi-stors," Appl. Phys. Lett. vol. 95, p. 013502, 2009 https://doi.org/10.1063/1.3159831
- A. Suresh and J.F. Muth, "Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors," Appl. Phys. Lett. vol. 92, p.033502, 2008 https://doi.org/10.1063/1.2824758
- C.T. Tsai, T.C. Chang, S.C. Chen, I. Lo, S.W. Tsao, M.C. Hung, J.J. Chang, C.Y. Huang, and C.Y. Huang, " Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor, " Appl. Phys. Lett. vol. 96, p. 242105, 2010 https://doi.org/10.1063/1.3453870
- T.C. Fung, C.S. Chung, C. Chen, K. Abe, R. Cottle, M. Townsend, H. Kumomi, and J. Kanicki, "Two-dimensional numerical simulation of radio frequency sputter amorphous In-Ga-Zn-O thin film transistors," J. of Applied Physics, vol. 106, p. 084511, 2009 https://doi.org/10.1063/1.3234400
- S.M.Lee, C.G. Yu, W.J. Cho, and J.T. Park," Hot carrier degradation of InGa- ZnO thin film transistor under light illumination at elevated temperature," Solid-state Electronics, 예정
- D.W. Kwon, J.H. Kim, J.S. Chang, S.W. Kim, M.C. Sun, G. Kim, H.W. Kim, J.C. Park, I.S. Song, C.J. Kim, U.I. Jung, and B.G. Park, "Charge injection from gate electrode by simultaneous stress of optical and electrical bias in HfInZnO amorphous oxide thin film transistors," Appl. Phys. Lett. vol. 97, p. 193504, 2010 https://doi.org/10.1063/1.3508955
- I. Song, S. Kim, H. Yin, C. Kim, J. Park, S. Kim, H. Choi, E. Lee, and Y. Park, "Short channel characteristics of Gallium-Indium-Zinc-Oxide thin film transistors for three dimensional stacking memory," IEEE Electron Device Lett. vol. 29, no. 6, pp. 549-551, 2008 https://doi.org/10.1109/LED.2008.920965
- S. Lee, J. Park, K. Jeon, S. Kim, Y. Jeon, A. Kim, D.M. Kim, J.C. Park, and C. J. Kim, "Modeling and characteriz- ation of metal-semiconductor-based sou- rce-drain contacts in amorphous InGa- ZnO thin film transistors, Appl. Phys. Lett. vol. 96, p. 113506, 2010 https://doi.org/10.1063/1.3364134
- J.K. Jeong, H.W. Yang, J.H. Jeong, Y.G. Mo, and H.D. Kim, "Origin of threshold voltage instability in indium-gallium- zinc-oxide thin film transistors," Appl. Phys. Lett. vol. 93, p. 123508, 2008 https://doi.org/10.1063/1.2990657
- S.H. Choi, and M.K. Han, "Effects of channel width on negative shift of threshold voltage, including stress-indu- ced hump phenomenon in InGaZnO thin film transistor under high-gate and drain bias stress," Appl. Phys. Lett. vol. 100, p. 043503, 2012 https://doi.org/10.1063/1.3679109