Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Non-stoichiometric AlOx Films Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics

  • Lee, Sun-Sook (Advanced Materials Devision, Korea Research Institute of Chemical Technology) ;
  • Lee, Eun-Seok (Advanced Materials Devision, Korea Research Institute of Chemical Technology) ;
  • Kim, Seok-Hwan (Advanced Materials Devision, Korea Research Institute of Chemical Technology) ;
  • Lee, Byung-Kook (Advanced Materials Devision, Korea Research Institute of Chemical Technology) ;
  • Jeong, Seok-Jong (Advanced Materials Devision, Korea Research Institute of Chemical Technology) ;
  • Hwang, Jin-Ha (Department of Materials Science and Engineering, Hongik University) ;
  • Kim, Chang-Gyoun (Advanced Materials Devision, Korea Research Institute of Chemical Technology) ;
  • Chung, Taek-Mo (Advanced Materials Devision, Korea Research Institute of Chemical Technology) ;
  • An, Ki-Seok (Advanced Materials Devision, Korea Research Institute of Chemical Technology)
  • Received : 2012.02.22
  • Accepted : 2012.03.29
  • Published : 2012.07.20
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Abstract

Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

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