• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2207-2212
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• 2012

Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

• Journal of the Mineralogical Society of Korea
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• v.9 no.2
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• pp.71-81
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• 1996

Dissolution experiments were conducted to understand chemical nature of weathering of anorthosite from the Hadong area. Anorthosite and plagioclase from it were reacted with HCl or KOH solutions under various conditions concerning such as grain size, initial pH of solutions, and shaking Average composition of plagioclase used in the experiment was Na0.32Ca0.71Al1.71Si2.28O8.Under acidic conditions, solution pH increases rapidly in the initial stage and then gradually to reach palteau. Shaking agitates the reaction rate in the initial stage but does not affect after the system reached steady state. Ca and si concentrations show rapid increase and then gradual increase. Al concentration increases rapidly in the early stage and then decreases. Later decrease was interpreted as the precipitation of an Al-bearing material. Different dissolution rates of different constituents of plagioclase together the with precipitation of al-bearing material might be responsible for the non-stoichiometric dissolution of plagioclase.X-ray diffraction analyses on anorthosite before and after dissolution experiment show dissolution rates differ with different lattice planes of plagioclase. It suggests the crystallographic control on dissolution reaction. X-ray photoelectron spectroscopic result shows that the average composition of plagioclase surface reacted with HCL of initial pH 1.97 for 2000 hours is Na0.20Ca0.26Al1.7Si2.3O8. It means that Na- and Ca-depleted H-feldspar is developed without Al-depleted layer on the surface of plagioclase by reaction with HCl and that dissolution reaction takes place sparsely on the surface of plagioclase. Al and Si are dissolved preferentially over Ca from anorthosite powder in KHO solution. Reaction of acid-reacted anorthosite with KOH solution shows the same Si dissolution behavior as in the fresh anorthosite. This indicates that the Al-depleted and Si-enriched layer does not build up on the acid-reacted surface.