Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth of O- and Zn-polar ZnO films by DC magnetron sputtering

  • Yoo, Jin-Yeop (Department of Nano-semiconductor Engineering, National Korea Maritime University) ;
  • Choi, Sung-Kuk (Department of Nano-semiconductor Engineering, National Korea Maritime University) ;
  • Jung, Soo-Hoon (Department of Nano-semiconductor Engineering, National Korea Maritime University) ;
  • Cho, Young-Ji (Department of Nano-semiconductor Engineering, National Korea Maritime University) ;
  • Lee, Sang-Tae (Department of Offshore Plant Management, National Korea Maritime University) ;
  • Kil, Gyung-Suk (Division of Electrical and Electronics Engineering, National Korea Maritime University) ;
  • Lee, Hyun-Jae (PAN-Xal Co., Ltd.) ;
  • Yao, Takafumi (Center for Interdisciplinary Research, Tohoku University) ;
  • Chang, Ji-Ho (Department of Nano-semiconductor Engineering, National Korea Maritime University)
  • Received : 2011.10.12
  • Accepted : 2011.11.18
  • Published : 2012.02.29
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Abstract

O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.

Keywords

References

  1. T. Dethprohm, K. Hiramatsu, H. Amano and I. Akasaki, "Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer", Appl. Phys. Lett. 61 (1992) 2688. https://doi.org/10.1063/1.108110
  2. T. Detchprohm, H. Amano, K. Hiramatsu and I. Akasaki, "The growth of thick GaN film on sapphire substrate by using ZnO buffer layer", J. Cryst. Growth 128 (1993) 384. https://doi.org/10.1016/0022-0248(93)90353-X
  3. S. Gu, R. Zhang, Y. Shi, Y. Zheng, L. Zhang and T.F. Kuech, "Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers" Appl. Phys. A 74 (2002) 537. https://doi.org/10.1007/s003390100933
  4. S.W. Lee, T. Minegishi, W.H. Lee, H. Goto, H.J. Lee, S.H. Lee, H.-J. Lee, J.S. Ha, T. Goto, T. Hanada, M.W. Cho and T. Yao, "Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique", Appl. Phys. Lett. 90 (2007) 061907. https://doi.org/10.1063/1.2470163
  5. K. Kim, J. Song, H. Jung, W. Choi, S. Park and J. Song, "The grain size effects on the photoluminescence of $ZnO/{\alpha}-Al_{2}O_{3}$ grown by radio-frequency magnetron sputtering", J. Appl. Phys. 87 (2000) 3573. https://doi.org/10.1063/1.372383
  6. J.-H. Lim, C.-K. Kang, K.-K. Kim, I.-K. Park, D.-K. Hwang and S.-J. Park, "UV electroluminesecence emission from ZnO light-emitting diodes grown by hightemperature radiofrequency sputtering", Adv. Mater. 18 (2006) 2720. https://doi.org/10.1002/adma.200502633
  7. X. Gu, M.A. Reshchikov, A. Teke, D. Johnstone, H. Morkoc, B. Nemeth and J. Nause, "GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces", Appl. Phys. Lett. 84 (2004) 2268. https://doi.org/10.1063/1.1690469
  8. R. Cebulla, R. Wendt and K. Ellmer, "Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties", J. Appl. Phys. 83 (1998) 1087. https://doi.org/10.1063/1.366798
  9. K.K. Kim, J.H. Song, H.J. Jung, W.K. Choi, S.J. Park and J.H. Song, "The grain size effects on the photoluminescence of $ZnO/{\alpha}-Al_{2}O_{3}$ grown by radio-frequency magnetron sputtering", J. App. Phys. 87 (2000) 3573. https://doi.org/10.1063/1.372383
  10. X. Wang, Y. Tomita, O.H. Roh, M. Ohsugi, S.B. Che, T. Ishtani and A. Yoshikawa, "Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy", Appl. Phys. Lett. 86 (2005) 011921. https://doi.org/10.1063/1.1846951
  11. H. Tampo, P. Fons, A. Yamada, K.K. Kim, H. Shibata, K. Matsubara, S. Niki, H. Yoshikawa and H. Kanie, "Determination of crystallographic polarity of ZnO layers", Appl. Phys. Lett. 87 (2005) 141904. https://doi.org/10.1063/1.2067689
  12. J.S. Park, J.H. Chang, T. Minegishi, H.J. Lee, S.H. Park, I.H. Im, T. Hanada, S.K. Hong, M.W. Cho and T. Yao, "Growth of polarity-controlled ZnO films on (0001) $Al_{2}O_{3}$", Journal of Electronic Materials 37 (2008) 736. https://doi.org/10.1007/s11664-007-0350-y
  13. H. Kato, M. Sano, K. Miyamoto and T. Yao, "Polarity control of ZnO on c-plane sapphire by plasma-assisted MBE", J. Cryst. Growth 275 (2005) e2459. https://doi.org/10.1016/j.jcrysgro.2004.11.377
  14. K. Sakurai, M. Kanehiro, K. Nakahara, T. Tanabe S. Fujita and S. Fujita, "Effects of oxygen plasma condition on MBE growth of ZnO", J. Cryst. Growth 209 (2000) 522. https://doi.org/10.1016/S0022-0248(99)00610-7
  15. J.H. Park, S.J. Jang, S.S. Kim and B.T. Lee, "Growth and characterization of single crystal ZnO thin films using inductively coupled plasma metal organic chemical vapor deposition", Appl. Phys. Lett. 89 (2006) 121108. https://doi.org/10.1063/1.2356075