한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제25권2호
  • /
  • Pages.125-128
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  • 2012
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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High-k 감지막 평가를 통한 고성능 고감도의 Electrolyte-Insulator-Semiconductor pH센서 제작

Study of High-k Sensing Membranes for the High Quality Electrolyte Insulator Semiconductor pH Sensor

  • 배태언 (광운대학교 전자재료공학과) ;
  • 장현준 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Bae, Tae-Eon (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Jang, Hyun-June (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2012.01.17
  • 심사 : 2012.01.24
  • 발행 : 2012.02.01
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초록

We fabricated the electrolyte-insulator-semiconductor (EIS) devices with various high-k sensing membranes to realize a high quality pH sensor. The sensing properties of each high-k dielectric material were compared with those of conventional $SiO_2$ (O) and $SiO_2/Si_3N_4$ (ON) membranes. As a result, the high-k sensing membranes demonstrated better sensitivity and stability than the O and ON membranes. Especially, the $SiO_2/HfO_2$ (OH) stacked layer showed a high sensitivity and the $SiO_2/Al_2O_3$ (OA) stacked layer exhibited an excellent chemical stability. In conclusion, the high-k sensing membranes are expected to have excellent operating characteristics in terms of sensitivity and chemical stability for the biosensor application.

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참고문헌

  1. R. Mlika, H. Ben Ouada, R. Ben Chaabane, M. Gamoudi, G. Guilaud, N. Jaffrezic-Renault, and R. Lamartine, Electrochimica Acta, 43, 841 (1997). https://doi.org/10.1016/S0013-4686(97)00259-4
  2. T. M. Pan, J. C. Lin, Sensor. Actuat., B138, 474 (2009).
  3. J. C. Chou and C. Y. Weng, Mater. Chem. Phys., 71, 120 (2001). https://doi.org/10.1016/S0254-0584(00)00513-7
  4. C. E. Lue, J. C. Wang, D. G. Pijanowska, C. M. Yang, I. S. Wang, H. C. Lee, and C. S. Lai, Microelectron. Reliab., 50, 738 (2010). https://doi.org/10.1016/j.microrel.2010.01.026
  5. L. Bousse, S. Mostar-shed, B. Van der Schoot, and N. F. de Rooij, Sensor. Actuat., B17, 157 (1994).
  6. L. Bousse and P. Bergveld, Sensor. Actuat., B6, 65 (1984).
  7. T. M. Pan, M. D. Huang, C. W. Lin, and M. H. Wu, Sensor. Actuat., B144, 139 (2010).
  8. T. M. Pan, J. C. Lin, M. H. Wu, and C. S. Lai, Sensor. Actuat. B-Chem., 138, 619 (2009). https://doi.org/10.1016/j.snb.2009.01.051