참고문헌
- I. S. Han, H. M. Kwon, J. D. Bok, S. K. Kwon, Y. J. Jung, W. I. Choi, D. S. Choi, M. G. Lim, Y. S. Jung, J. H. Lee, G. W. Lee, and H. D. Lee, Jpn. J. Appl. Phys., 50, 10PB03 (2011). https://doi.org/10.1143/JJAP.50.10PB03
- M. M. Nelson, K. Yokoyama, M. Thomason, G. Scott, and B. Greenwood, IEEE WMED (Boise, USA, 2005) p. 17.
- T. B. Hook, E. Adler, F. Guarin, J. Lukaitis, N. Rovedo, and K. Schruefer, IEEE Trans. Elec. Dev., 48, 1346 (2001). https://doi.org/10.1109/16.930650
- R. Brederlow, W. Weber, R. Jurk, C. Dahl, S. Kessel, J. Holz, W. Sauert, P. Klein, B. Lemaitre, D. S. Landsiedel, and R. Thewes, Proc. 28th ESSDERC (Bordeaux, France, 1998) p. 472.
- P. E. Wright and K. C. Saraswat, IEEE Trans. Elec. Dev., 36, 879 (1989). https://doi.org/10.1109/16.299669
- T. B. Hook, E. Adler, F. Guarin, J. Lukaitis, N. Rovedo, and K. Schruefer, IEEE Trans. Elec. Dev., 48, 1346 (2001). https://doi.org/10.1109/16.930650
- A. Balasinski, M. H. Tsai, L. Vishnubhotla, T. P. Ma, H. H. Tseng, and P. J. Tobin, Microelectron. Eng., 22, 97 (1993). https://doi.org/10.1016/0167-9317(93)90139-V
- Y. Yasuda and C. Hu, International Electron Device Meeting (San Francisco, USA, 2006) p. 1.
- S. R. Kasi, M. Liehr, and S. Cohen, Appl. Phys. Lett., 58, p. 2975 (1991). https://doi.org/10.1063/1.104686