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Cu2ZnSnSe4 Thin Films Preparation by Pulsed Laser Deposition Using Powder Compacted Target

  • Kim, Kyoo-Ho (Department of Materials Science and Engineering, Yeungnam University) ;
  • Wibowo, Rachmat Adhi (Department of Materials Science and Engineering, Yeungnam University) ;
  • Alfaruqi, M.Hilmy (Department of Materials Science and Engineering, Yeungnam University) ;
  • Ahn, Jong-Heon (Department of Materials Science and Engineering, Yeungnam University)
  • Received : 2011.09.29
  • Accepted : 2011.10.28
  • Published : 2011.10.31

Abstract

$Cu_2ZnSnSe_4$ thin films for solar absorber application were prepared by pulsed laser deposition of a synthesized $Cu_2ZnSnSe_4$ compound target. The film's composition revealed that the deposited films possess an identical composition with the target material. Further film compositional control toward a stoichiometric composition was performed by optimizing substrate temperature, deposition time and target rotational speed. At the optimum condition, X-ray diffraction patterns of films showed that the films demonstrated polycrystalline stannite single phase with a high degree of (112) preferred orientation. The absorption coefficient of $Cu_2ZnSnSe_4$ thin films were above 104 cm.1 with a band gap of 1.45 eV. At an optimum condition, films were identified as a p type semiconductor characteristic with a resistivity as low as $10^{-1}{\Omega}cm$ and a carrier concentration in the order of $10^{17}cm^{-3}$.

Keywords

References

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