한국레이저가공학회지 (Laser Solutions)

한국레이저가공학회 (Korean Society of Laser Processing)
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단일 펨토초 레이저펄스를 이용한 실리콘 표면에서의 시분해 반사율 측정 연구

Time-resolved transient reflective image on silicon surface after single-shot fs-laser pulse irradiation

  • 문혜영 (한국표준과학연구원 미래융합측정본부) ;
  • 시두 메라 씽 (한국표준과학연구원 미래융합측정본부) ;
  • 이현규 (한국표준과학연구원 미래융합측정본부) ;
  • 정세채 (한국표준과학연구원 미래융합측정본부)
  • Moon, Heh-Young (Division of Convergence Technology, Korea Research Institute of Standard and Science) ;
  • Sidhu, Mehra Singh (Division of Convergence Technology, Korea Research Institute of Standard and Science) ;
  • Lee, Hyun-Kyu (Division of Convergence Technology, Korea Research Institute of Standard and Science) ;
  • Jeoung, Sae-Chae (Division of Convergence Technology, Korea Research Institute of Standard and Science)
  • 투고 : 2011.08.09
  • 심사 : 2011.12.23
  • 발행 : 2011.12.31
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초록

In this work, we have studied on time-resolved transient reflective image of single crystalline Si surface after single-shot fs-laser irradiation with varying the laser fluence under two different laser spot sizes. The temporal profiles of transient reflectivity changes as well as its maximum values at the early delay time were found to be strongly dependent on both the laser beam spot size and laser fluence. We have interpreted the dependence of transient reflectivity changes on the laser spot size in terms of a relaxation of the generated free carriers to the bulk silicon, which should be interacted with the plasma.

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