Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Field Modulation Effect of a Fluoride Plasma Treatment on the Blocking Characteristics of AlGaN/GaN High Electron Mobility Transistors

  • Kim, Young-Shil (School of Electrical Engineering, Seoul National University) ;
  • Seok, O-Gyun (School of Electrical Engineering, Seoul National University) ;
  • Han, Min-Koo (School of Electrical Engineering, Seoul National University) ;
  • Ha, Min-Woo (Korea Electronics Technology Institute)
  • Received : 2011.05.09
  • Accepted : 2011.06.02
  • Published : 2011.08.25
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Abstract

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

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