DOI QR코드

DOI QR Code

Fabrication of a Porous 3C-SiC Based Resistivity Hydrogen Sensor and Its Characteristics

다공성 3C-SiC 기반 저항식 수소센서의 제작과 그 특성

  • Received : 2010.11.17
  • Accepted : 2011.02.28
  • Published : 2011.05.31

Abstract

Porous 3C-SiC(pSiC) samples with different pore diameters were prepared from poly crystalline N-type 3C-SiC by electrochemical anodization. The pSiC surface was chemically modified by the sputtering of Pd and Pt nano-particles as a hydrogen catalyst. Changes in resistance were monitored with hydrogen concentrations in the range of 110 ppm - 410 ppm. The variations of the electrical resistance in the presence of hydrogen demonstrated that Pd and Pt-deposited pSiC samples have the ability to detect hydrogen at room temperature. Regardless of the catalyst, the 25 nm pore diameter samples showed good response and recovery properties. However, the 60 nm samples showed unstable and slow response. It was found that the pore size affects the catalyst reaction and consequently, results in changes of the sensitivity to hydrogen.

Keywords

References

  1. S. D. Han, "Review and new trends of hydrogen gas sensor technologies", J. Kor. Sens. Soc. vol. 19, no. 2, pp. 67-86, 2010. https://doi.org/10.5369/JSST.2010.19.2.067
  2. F. Rahimi and A. I. Zad", Characterization of Pd nanoparticle dispersed over porous silicon as a hydrogen sensor", J. Phys. D: Appl. Phys, vol. 40, pp. 7201-7209, 2007. https://doi.org/10.1088/0022-3727/40/23/S03
  3. M. Mohamad, F. Mustafa, S. F. A. Rahman, M. S. Z. Abidin, N. K. A. Obaidi, A. M. Hashim, A. A. Aziz, and M. R. Hashim", The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT", J. Appl. Sci, vol. 10, pp. 1797-1801, 2010. https://doi.org/10.3923/jas.2010.1797.1801
  4. D. U. Hong, C. H. Han, S. H. Park, I. J. Kim, J. Gwak, S. D. Han, and H. J. Kim, "Recovery properties of hydrogen gas sensor with Pd/titanate and Pt/titanate nanotubes photo-catalyst by UV radiation from catalytic poisoning of H2S", Curr. Appl. Phys. vol. 9, pp, 172-178, 2009. https://doi.org/10.1016/j.cap.2008.01.010
  5. B. Ozpineci, and L. M. Tolbert, " Characterization of SiC Schottky diodes at different temperatures", IEEE Power Electr. Lett, vol. 1, pp. 54-56, 2003. https://doi.org/10.1109/LPEL.2003.821026
  6. G. S. Chung, K. S. Kim, and J. H. Jeoung, "Growth of polycrystalline 3C-SiC thin films for M/NEMS applications by CVD", J. Kor. Sensors. Soc., vol. 16, no. 2, pp. 85-90, 2007. https://doi.org/10.5369/JSST.2007.16.2.085
  7. G. S. Chung and K. S. Kim", Formation of porous 3C-SiC thin film by anodization with UV-LED", J. Kor. Sensors. Soc., vol. 18, no. 4, pp. 307-310, 2009. https://doi.org/10.5369/JSST.2009.18.4.307
  8. P. K. Sekhar, A. Sine, and S. Bhansali," Effect of varying the nanostructured porous-Si process parameters on the performance of Pd-doped hydrogen sensor", Sens & Actu. B, vol. 127, pp. 74-81, 2007. https://doi.org/10.1016/j.snb.2007.07.018
  9. K. J. Jeon, J. M. Lee, E. S. Y. Lee, and W. Y. Lee, "Individual Pd nanowire hydrogen sensors fabricated by electron-beam lithography", Nano Tech. vol. 20, 135502(1)-135502(5), 2009.
  10. M Ramanathan, G Skudlarek, H H Wang, and S B Darling, "Crossover behavior in the hydrogen sensing mechanism for palladium ultrathin films,"Nano Tech., vol. 21, pp. 125501(1)-(6), 2010.

Cited by

  1. Fabrication of Hydrogen Sensors Using Graphenes Decorated Nanoparticles and Their Characteristics vol.21, pp.6, 2012, https://doi.org/10.5369/JSST.2012.21.6.425