조명전기설비학회논문지 (Journal of the Korean Institute of Illuminating and Electrical Installation Engineers)

  • 제25권4호
  • /
  • Pages.79-87
  • /
  • 2011
  • /
  • 1229-4691(pISSN)
  • /
  • 2287-5034(eISSN)
한국조명전기설비학회 (The Korean Institute of IIIuminating and Electrical Installation Engineers)
권호 표지
DOI QR코드

DOI QR Code

Microwave Plasma Process에 의한 N-Hexane으로부터 다이아몬드 박막제작 및 특성

Fabrication and Properties of Diamond Thin-Film from N-Hexane by Using Microwave Plasma Process

  • 한상보 (경남대학교 전기공학과) ;
  • 권태진 (경남대학교 전기공학과) ;
  • 박상현 (경남대학교 전기공학과) ;
  • 박재윤 (경남대학교 전기공학과) ;
  • 이승지 (경남대학교 대학원 첨단공학과)
  • 투고 : 2010.12.05
  • 심사 : 2011.01.25
  • 발행 : 2011.04.30
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In this paper, the best conditions for the deposition of the high quality diamond thin-film from N-hexane as a carbon source in the microwave plasma process was carried out. Major parameters are the deposition time, flow rates of oxygen and hexane. The deposition time for the steady state thin-film was required more than 4[h], and the suitable flow rates of hexane and oxygen for the high-quality thin-film are 0.4[sccm] and 0.1~0.2[sccm], respectively. In addition, amorphous carbons such as DLC and graphite were grown by increasing the flow rate of hexane, and it decreased by increasing the flow rate of oxygen. Specifically, the growth rate is about 1.5[${\mu}mh-1$] under no addition of oxygen and it decreased about 60[%] as ca. 1.0[${\mu}mh-1$] with oxygen.

키워드

참고문헌

  1. B. V. Spitsyn, L. L. Bouilov, and B. V. Derjaguin, “Vapor growth of diamond on diamond and other surface,” J. Crystal Growth., vol. 52, 219-226, 1981. https://doi.org/10.1016/0022-0248(81)90197-4
  2. S. Matsumoto, Y. Sato, M. Kamo, and N. Setaka, “Vapor Deposition of diamond Particle from Methane”, Jpn. J. Appl. Phys., Vol. 21, No. 4, L183-185, 1982. https://doi.org/10.1143/JJAP.21.L183
  3. Xiao Jun Hu, Yao Gen Shen, Xiao Peng Hao, Bao Yi Wang, “The structure properties of B-O codoped diamond films”, Vol. 18, No. 2-3, 210-212, 2009. https://doi.org/10.1016/j.diamond.2008.07.009
  4. Jin-hai Gao, Lan Zhang, Bing-lin Zhang, Ning Yao, Ai-Hua Wang, “Fabrication of globe-like diamond microcrystalline aggregate films and investigation of their field emission properties,” Thin Solid Films, Vol. 516, No. 21, 7807-7811, 2008. https://doi.org/10.1016/j.tsf.2008.03.048
  5. Yasuo Koide, “Metal-diamond semiconductor interface and photodiode application,” Applied Surface Sci., Vol. 254, No. 19, 6268-6272, 2008. https://doi.org/10.1016/j.apsusc.2008.02.157
  6. Duosheng Li, Dunwen Zuo, Wenzhung Lu, Rongfa Chen, Bingkun Xiang, Min Wang, “Effects of methane concentration on diamond spherical shell films prepared by DC-plasma jet CVD,” Solid State Ionics, Vol. 179, No. 21-26, 1263-1267, 2008. https://doi.org/10.1016/j.ssi.2008.01.066
  7. D. Saito, E. Tsutsumi, N. Ishigaki, T. Tashiro, T. Kimura, S. Yugo, “A new method of formation of impurity-doped diamond films by bias method,” Diamond & Related Materials, Vol. 11, 1804, 2002. https://doi.org/10.1016/S0925-9635(02)00164-4
  8. D. Saito, H.Isshiki, T. Kimira, “Positive-bias enhanced growth of high quality diamond films by microwave plasma chemical vapor deposition,” Diamond & Related Materials, Vol. 18, 56-60, 2009. https://doi.org/10.1016/j.diamond.2008.09.024
  9. X. M. Meng, W.Z.Tang, others, “Application of CVD nanocrystalline diamond films to cemented carbide drills,” Int. J. Refractory Metals & Hard Materials, Vol. 26, 485-490, 2008. https://doi.org/10.1016/j.ijrmhm.2007.11.006
  10. Y. S. Li, Y. Tang, Q. Yang, S. Shimada, K. Y. Lee, A. Hirose, “Al-enhanced nucleation and adhesion of diamond films on WC-Co substrates,” Int. J. Refractory Metals & Hard Materials, Vol. 26, 465-471, 2008. https://doi.org/10.1016/j.ijrmhm.2007.11.001