Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

Numerical Analysis for Improvement of Cooling Performance in Nanoimprint Lithography Process

나노임프린트 공정에서의 냉각성능 개선에 대한 수치해석

  • Lee, Ki-Yeon (Dept. of Mechanical Engineering, Soonchunhyang University) ;
  • Jun, Sang-Bum (Dept. of Mechanical Engineering, Soonchunhyang University) ;
  • Kim, Kug-Weon (Dept. of Mechanical Engineering, Soonchunhyang University)
  • 이기연 (순천향대학교 공과대학 기계공학과) ;
  • 전상범 (순천향대학교 공과대학 기계공학과) ;
  • 김국원 (순천향대학교 공과대학 기계공학과)
  • Received : 2011.11.11
  • Accepted : 2011.12.15
  • Published : 2011.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

In recent years there have been considerable attentions on nanoimprint lithography (NIL) by the display device and semiconductor industry due to its potential abilities that enable cost-effective and high-throughput nanofabrication. A major disadvantage of thermal NIL is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to improve the cooling performance in NIL process. In this paper, a numerical analysis model of cooling system in thermal NIL was development by CAD/CAE program and the performance of the cooling system was analyzed by the model. The calculated temperatures of nanoimprint device were verified by the measurements. By using the analysis model, the case that the cooling material is replaced by liquid nitrogen is investigated.

Keywords

References

  1. Chou, S. and Krauss, P., "Imprint lithography with sub- 10nm feature size and high throughput," Microelectronic Engineering., Vol. 35, pp. 237-240, 1997. https://doi.org/10.1016/S0167-9317(96)00097-4
  2. Guo, L. J., "Recent progress in nanoimprint technology and its applications," J. Phys. D: Appl. Phys., Vol. 37, pp. R123-R141, 2004. https://doi.org/10.1088/0022-3727/37/11/R01
  3. Khang D.-Y. and Lee, H. H., "Room temperature Imprint Lithography by Solvent Vapor Treatment", Appl. Phys. Lett., Vol. 76, No. 7, pp.870-872. 2000. https://doi.org/10.1063/1.125613
  4. Alkaisi, M. M., Blaikie R. J. and McNab, S. J., "Low Temperature Nanoimprint Lithography Using Silicon Nitride Molds", Microelectron. Eng., Vols. 57-58, pp. 367-373. 2001. https://doi.org/10.1016/S0167-9317(01)00435-X
  5. 김남웅, 김국원, 신효철, "저온 나노임프린트 공정에서 압력과 폴리머 레지스트 초기 두께의 영향", 한국공작기계학회논문집 제18권 제1호, pp. 68-75. 2009.