정전척 온도분포 개선을 위한 냉각수 관로 형상

Coolant Path Geometry for Improved Electrostatic Chuck Temperature Variation

  • 이기석 (공주대학교 기계자동차공학부)
  • Lee, Ki-Seok (Division of Mechanical & Automotive Engineering, Kongju National University)
  • 투고 : 2011.10.18
  • 심사 : 2011.12.15
  • 발행 : 2011.12.31

초록

Uniformity of plasma etching processes critically depends on the wafer temperature and its distribution. The wafer temperature is affected by plasma, chucking force, He back side pressure and the surface temperature of ESC(electrostatic chuck). In this work, 3D mathematical modeling is used to investigate the influence of the geometry of coolant path and the temperature distribution of the ESC surface. The model that has the coolant path with less change of the cross-sectional area and the curvature shows low standard deviation of the ESC surface temperature distribution than the model with the coolant path of the larger surface area and more geometric change.

키워드

참고문헌

  1. Kiihanmaki, J. and Franssila, S., "Deep Silicon Etching in inductively Coupled Plasma Reactor for MEMS," Phisica Scpita., T79, 1999.
  2. Tretheway, D. and Aydil, E. S., "Modeling of Heat Transport and Wafer Heaing Effects during Plasma Etching," J. Electrochem. Soc., Vol. 143, pp. 3674-3680., 1996. https://doi.org/10.1149/1.1837270
  3. Samir, T. 2003 Improving Wafer Temperature Uniformity for Etch Applications. A Dissertation in Mechanical Engineering, Texas Tech University.
  4. Daviet, J. and Peccoud L., "Heat Transfer in a Microelectronics Plasma Reactor," J. Appl. Phys., Vol. 73, pp.1471-1479., 1993. https://doi.org/10.1063/1.353221
  5. Kelkar, U.M., Gordon, M. H., Roe, L. A. and Li, Y., "Diagnostics and modeling in a pure argon plasma: Energy balance study," J. Vac. Sci. Technol. A17, pp.125-132., 1999.