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GaN Grown Using Ti Metal Mask by HVPE(Hydride Vapor Phase Epitaxiy)

HVPE(Hydride Vapor Phase Epitaxiy) 성장법으로 Ti metal mask를 이용한 GaN 성장연구

  • Kim, Dong-Sik (Dept. of Computer Systems & Engineering, Inha Technical College)
  • 김동식 (인하공업전문대학 컴퓨터시스템과)
  • Received : 2011.03.17
  • Accepted : 2011.06.15
  • Published : 2011.06.25
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Abstract

The epitaxial GaN layer of $120{\mu}m$ ~ $300{\mu}m$ thickness with a stripe Ti mask pattern is performed by hydride vapor phase epitaxy(HVPE). Ti strpie mask pattern is deposited by DC magnetron sputter on GaN epitaxial layer of $3{\mu}m$ thickness is grown by hydride vapor phase epitaxy(HVPE). Void are observed at point of Ti mask pattern when GaN layer is investigated by scanning electron microscope. The Crack of GaN layer is observed according to void when it is grown more thick GaN layer. The full width at half maximum of peak which is measured by X-ray diffraction is about 188 arcsec. It is not affected its crystallization by Ti meterial when GaN layer is overgrown on Ti stripe mask pattern according as it is measure FWHM of overgrowth GaN using Ti material against FWHM of first growth GaN epitaxial layer.

HVPE법으로 $3{\mu}m$의 GaN epi를 성장하고 이 위에 DC 마그네트론 Sputter를 이용하여 Ti stripe 패턴 형성하였으며 다시 HVPE를 이용하여 $120{\mu}m$ ~ $300{\mu}m$ 두께의 GaN를 overgrowth하였다. 성장된 GaN는 SEM 측정으로 Ti 패턴한 부분에서 void가 관찰되었고 보다 두꺼운 GaN를 성장시에는 크랙이 void를 따라 발생할 수 있음을 확인하였으며 XRD측정으로 FWHM은 188 arcsec로 측정되었다. 성장전의 GaN epi와의 반치폭을 비교하였을 때 패턴에 사용된 Ti는 overgrowth시 결정성에는 크게 영향을 주지 않는다는 것을 확인하였다.

Keywords

References

  1. S. Nakamura, S. Pearton, and G. Fasol, "The Blue Laser Diode"(Springer, New York, 1997).
  2. E. Richter, Ch. Henning, M. Weyers, F. Habel, J.-D. Tsay, W.-Y. Liu, P. Bruckner, F. Scholz, Yu. Makarov, A. Segal,and J. Kaeppeler, "Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE", J. Cryst. Growth 277, 6 (2005). https://doi.org/10.1016/j.jcrysgro.2004.12.169
  3. K. Fujito, Sh. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, "Bulk GaN crystals grown by HVPE", J. Cryst. Growth 311, 3011 (2009). https://doi.org/10.1016/j.jcrysgro.2009.01.046
  4. B. Monemar, H. Larsson, C. Hemmingsson, I. G. Ivanov, and D. Gogova, "Growth of thick GaN layers with hydride vapour phase epitaxy", J. Cryst. Growth 281, 17 (2005). https://doi.org/10.1016/j.jcrysgro.2005.03.040
  5. H. Jong. Lee, J. S. Ha, H. Jae. Lee, S. W. Lee, S. H. Lee, H. Goto, S. K. Hong, M. W. Cho, T. Yao, K. Fujito, K. Shimoyama, H. Namita, S. Nagao, "Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer", J. Cryst. Growth 311(3), 470 (2009). https://doi.org/10.1016/j.jcrysgro.2008.09.054
  6. C. L. Chao, C. H. Chiu, Y. J. Lee, H. C. Kuo, P.-C. Liu, J. D. Tsay, and S. J. Cheng, "Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy", Appl. Phys. Lett. 95, 051905 (2009). https://doi.org/10.1063/1.3195684
  7. E. Zaus, M. Hermann, M. Stutzmann, and M. Eickhoff, "Fabrication of freestanding GaN microstructures using AlN sacrificial layers", Phys. Stat. Sol. (RRL) 1(1), R10 (2007). https://doi.org/10.1002/pssr.200600063
  8. P. Bruckner, Annual Report 2006, Inst. Optoelectronics, Ulm University.
  9. M. HAINO, M. YAMAGUCHI, H. MIYAKE, A. MOTOGAITO, K. HIRAMATSU, Y. KAWAGUCHI, N. SAWAKI, Y. IYECHIKA, T. MAEDA, "Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-pressure metalorganic vapor phase epitaxy", Jpn. J. Appl. Phys. 39, L449 (2000). https://doi.org/10.1143/JJAP.39.L449
  10. K. HIRAMATSU, A. MOTOGAITO, H. MIYAKE, Y. HONDA, Y. IYECHIKA, T. MAEDA, F. BERTRAM, J. CHRISTEN and A. HOFFMANN, "Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask", IEICE TRANS. ELECTRON., E83-C(4), 620 (2000).
  11. K. HARA, T. NAOI and S. SAKAI, "GaN Re-growth Using Ta Mask by Metalorganic Chemical Vapor Deposition", ICNS-8, MP9 (2009).
  12. H. J. Lee, S. W. Lee, H. Gotoa, H. J. Lee, J. S. Ha, K. Fujiia, M. W. Cho, T. Yao, S. K. Hong, "The roles of low-temperature buffer layer for thick GaN growth on sapphire", J. Cryst. Growth 310(5), 920 (2008). https://doi.org/10.1016/j.jcrysgro.2007.11.105
  13. H. H. Huang, H. Y. Zeng, and W. I Lee, "Preparation of extended microtunnels in GaN by wet chemical etching", Phys. Stat. Sol. (b) 244(6), 1872 (2007). https://doi.org/10.1002/pssb.200674853