마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제18권4호
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  • Pages.11-18
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  • 2011
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
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4-point bending test system을 이용한 Cu-Cu 열 압착 접합 특성 평가

Characterization and observation of Cu-Cu Thermo-Compression Bonding using 4-point bending test system

  • 김재원 (한국기계연구원 나노융합기계연구본부) ;
  • 김광섭 (한국기계연구원 나노융합기계연구본부) ;
  • 이학주 (한국기계연구원 나노융합기계연구본부) ;
  • 김희연 (나노종합팹센터 Sa-FPA팀) ;
  • 박영배 (안동대학교 신소재공학부 청정에너지소재기술연구센터) ;
  • 현승민 (한국기계연구원 나노융합기계연구본부)
  • Kim, Jae-Won (Department of Nano-Mechanics, Korea Institute of Machinery & Materials) ;
  • Kim, Kwang-Seop (Department of Nano-Mechanics, Korea Institute of Machinery & Materials) ;
  • Lee, Hak-Joo (Department of Nano-Mechanics, Korea Institute of Machinery & Materials) ;
  • Kim, Hee-Yeon (Sa-FPA Team, National Nanofab Center) ;
  • Park, Young-Bae (School of Materials Science and Engineering, Andong National University) ;
  • Hyun, Seung-Min (Department of Nano-Mechanics, Korea Institute of Machinery & Materials)
  • 투고 : 2011.09.09
  • 심사 : 2011.11.23
  • 발행 : 2011.12.30
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초록

3차원 칩 적층 접합에 사용하기 위한 Cu-Cu 금속 저온 접합 공정을 위하여 접합 온도 및 플라즈마 표면 전처리에 따른 열 압착 접합을 수행 하였다. 4점굽힘시험과 CCD 카메라를 이용하여 Cu 접합부의 정량적인 계면접착에너지를 평가하였다. 접합 온도 $250^{\circ}C$, $300^{\circ}C$, $350^{\circ}C$에서 각각 $1.38{\pm}1.06$(상한값), $7.91{\pm}0.27$(하한값), $10.36{\pm}1.01$(하한값) $J/m^2$으로 접합온도 $300^{\circ}C$ 이상에서 계면접착에너지 5 $J/m^2$ 이상의 값을 얻었다. 접합 온도 $300^{\circ}C$ 이하 낮은 온도에서 접합하기 위해 Cu-Cu 열 압착 접합 전 Ar+$H_2$ 플라즈마로 $200^{\circ}C$에서 2분간 표면 전처리 후 $250^{\circ}C$ 조건에서 열 압착 접합할 경우 계면접착에너지 값이 $6.59${\pm}0.03$(하한값) $J/m^2$로 표면 전 처리하지 않은 시험편에 비해 접합 특성이 크게 증가 하였다.

The quantitative interfacial adhesion energy of the Cu-Cu direct bonding layers was evaluated in terms of the bonding temperature and Ar+$H_2$ plasma treatment on Cu surface by using a 4-point bending test. The interfacial adhesion energy and bonding quality depend on increased bonding temperature and post-annealing temperature. With increasing bonding temperature from $250^{\circ}C$ to $350^{\circ}C$, the interfacial adhesion energy increase from $1.38{\pm}1.06$ $J/m^2$ to $10.36{\pm}1.01$ $J/m^2$. The Ar+$H_2$ plasma treatment on Cu surface drastically increase the interfacial adhesion energy form $1.38{\pm}1.06$ $J/m^2$ to $6.59{\pm}0.03$ $J/m^2$. The plasma pre-treatment successfully reduces processing temperature of Cu to Cu direct bonding.

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피인용 문헌

  1. Cu-SiO2 하이브리드 본딩 vol.27, pp.1, 2011, https://doi.org/10.6117/kmeps.2020.27.1.0017