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Some Peculiarities of Photo-structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

  • Prikhodko, O. (Department of Kazakh National University) ;
  • Almasov, N. (Department of Kazakh National University) ;
  • Korobova, Natalya (Department of Kazakh National University)
  • 투고 : 2011.07.22
  • 심사 : 2011.08.18
  • 발행 : 2011.10.31

초록

The absence of deep traps for electrons in the spectrum of $As_{40}Se_{30}S_30$ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous $As_{40}Se_{30}S_30$ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

키워드

참고문헌

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