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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Effects of Channel Electron In-Plane Velocity on the Capacitance-Voltage Curve of MOS Devices

  • Mao, Ling-Feng (School of Electronics & Information Engineering, Soochow University)
  • Received : 2009.07.03
  • Accepted : 2009.08.23
  • Published : 2010.02.28
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Abstract

The coupling between the transverse and longitudinal components of the channel electron motion in NMOS devices leads to a reduction in the barrier height. Therefore, this study theoretically investigates the effects of the in-plane velocity of channel electrons on the capacitance-voltage characteristics of nano NMOS devices under inversion bias. Numerical calculation via a self-consistent solution to the coupled Schrodinger equation and Poisson equation is used in the investigation. The results demonstrate that such a coupling largely affects capacitance-voltage characteristic when the in-plane velocity of channel electrons is high. The ballistic transport ensures a high in-plane momentum. It suggests that such a coupling should be considered in the quantum capacitance-voltage modeling in ballistic transport devices.

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References

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