DOI QR코드

DOI QR Code

Size Control of Bismuth Nanoparticles by Changes in Carrier-Gas Flow Rate and Chamber Pressure of Gas Condensation Apparatus

가스응축장치 캐리어가스 공급속도 및 압력변화를 통한 비스무스 나노분말 입도제어

  • Lee, Gyoung-Ja (Nuclear Materials Research Division, Korea Atomic Energy Research Institute (KAERI)) ;
  • Kim, Chang-Kyu (Nuclear Materials Research Division, Korea Atomic Energy Research Institute (KAERI)) ;
  • Lee, Min-Ku (Nuclear Materials Research Division, Korea Atomic Energy Research Institute (KAERI)) ;
  • Rhee, Chang-Kyu (Nuclear Materials Research Division, Korea Atomic Energy Research Institute (KAERI))
  • 이경자 (한국원자력연구원 원자력재료연구부) ;
  • 김창규 (한국원자력연구원 원자력재료연구부) ;
  • 이민구 (한국원자력연구원 원자력재료연구부) ;
  • 이창규 (한국원자력연구원 원자력재료연구부)
  • Received : 2010.08.04
  • Accepted : 2010.09.15
  • Published : 2010.10.28

Abstract

In the present work, bismuth nanopowders with various particle size distributions were synthesized by controlling argon (Ar) gas flow rate and chamber pressure of a gas condensation (GC) apparatus. From the analyses of transmission electron microscopy (TEM) images and nitrogen gas adsorption results, it was found that as Ar gas flow rate increased, the specific surface area of bismuth increased and the average particles size decreased. On the other hand, as the chamber pressure increased, the specific surface area of bismuth decreased and the average particles size increased. The optimum gas flow rate and chamber pressure for the maximized electrochemical active surface area were determined to be 8 L/min and 50 torr, respectively. The bismuth nanopowders synthesized at the above condition exhibit 13.47 $m^2g^{-1}$ of specific surface area and 45.6 nm of average particles diameter.

Keywords

References

  1. J. Wang, J. Lu, S. B. Hocevar and P. A. M. Farias:Anal. Chem., 72 (2000) 3218. https://doi.org/10.1021/ac000108x
  2. J. Wang, J. Lu, S. B. Hocevar and B. Ogorevc: Electroanal.,13 (2001) 13. https://doi.org/10.1002/1521-4109(200101)13:1<13::AID-ELAN13>3.0.CO;2-F
  3. J. Wang, J. Lu, Ü. A. Kirgöz, S. B. Hocevar and B. Ogorevc: Anal. Chim. Acta, 434 (2001) 29. https://doi.org/10.1016/S0003-2670(01)00818-2
  4. S. B. Hocevar, B. Ogorevc, J. Wang and B. Pihlar:Electroanal., 14 (2002) 1707. https://doi.org/10.1002/elan.200290014
  5. G. Kefala, A. Economou, A. Voulgaropoulos and M. Sofoniou: Talanta, 61 (2003) 603. https://doi.org/10.1016/S0039-9140(03)00350-3
  6. G. Kefala, A. Economou and A. Voulgaropoulos: Analyst, 129 (2004) 1082. https://doi.org/10.1039/b404978k
  7. J. Kruusma, C.E. Banks and R. G. Compton: Anal. Bioanal. Chem., 379 (2004) 700.
  8. C. E Banks, J. Kruusma, R. R. Moore, P. Tomèík, J. Peters, J. Davis, Š. Komorsky-Lovrie and R. G. Compton: Talanta, 65 (2005) 423. https://doi.org/10.1016/j.talanta.2004.06.038
  9. J. Wang: Electroanal., 17 (2005) 1341. https://doi.org/10.1002/elan.200403270
  10. R. Pauliukaitë and C. M. A. Brett: Electroanal., 17 (2005) 1354. https://doi.org/10.1002/elan.200403282
  11. I. Svancara, L. Baldrianova, E. Tesarova, S. B. Hocevar, S. A. A. Elsuccary, A. Economou, S. Sotiropoulos, B. Ogorevc and K. Vytras: Electroanal., 18 (2006)177. https://doi.org/10.1002/elan.200503391
  12. G.-J. Lee, H. M. Lee and C. K. Rhee: Electrochem. Commun., 9 (2007) 2514. https://doi.org/10.1016/j.elecom.2007.07.030
  13. G.-J. Lee, H. M. Lee, Y. R. Uhm, M. K. Lee and C. K. Rhee: Electrochem. Commun., 10 (2008) 1920. https://doi.org/10.1016/j.elecom.2008.10.015
  14. H. M. Lee, G.-J. Lee, H. J. Kim, Y. R. Uhm, H. J. Kim, M. K. Lee and C. K. Rhee: J. Nanosci. Nanotechnol., 10 (2010) 309. https://doi.org/10.1166/jnn.2010.1502
  15. A. Y. Yermakov, M. A. Uimin, A. A. Mysik, A. Y. Korobeinikov, A. V. Korolyov, N. V. Mushnikov, T. Goto, V. S. Gaviko, N. N. Schegoleva: Mater. Sci. Forum,386-388 (2002) 455. https://doi.org/10.4028/www.scientific.net/MSF.386-388.455
  16. Y. R. Uhm, W. W. Kim, C. K. Rhee: Phys. Stat. Sol. A, 201 (2004) 1934. https://doi.org/10.1002/pssa.200304560
  17. B. S. Han, C. K. Rhee, M. K. Lee and Y. R. Uhm: IEEE Trans. Magnetics, 42 (2006) 3779. https://doi.org/10.1109/TMAG.2006.884515
  18. Y. R. Uhm, B. S. Han, M. K. Lee, S. J. Hong, C. K. Rhee: Mater. Sci. and Eng. A, 449-451 (2007) 813. https://doi.org/10.1016/j.msea.2006.02.427
  19. G. H. Lee, J. H. Park, C. K. Rhee, W. W. Kim: J. Ind. Eng. Chem., 9 (2003) 71.