마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제17권2호
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  • Pages.35-40
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  • 2010
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
권호 표지

상온에서 연속 조성 확산법에 의해 증착된 $Ta_2O_5-SiO_2$ 유전특성

Dielectric Properties of $Ta_2O_5-SiO_2$ Thin Films Deposited at Room Temperature by Continuous Composition Spread

  • 김윤회 (한국과학기술연구원 전자재료센터) ;
  • 정근 (한국과학기술연구원 전자재료센터) ;
  • 윤석진 (한국과학기술연구원 전자재료센터) ;
  • 송종한 (한국과학기술연구원 나노재료분석센터) ;
  • 박경봉 (안동대학교 청정소재기술연구센터) ;
  • 최지원 (한국과학기술연구원 전자재료센터)
  • Kim, Yun-Hoe (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Jung, Keun (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Yoon, Seok-Jin (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Song, Jong-Han (Nano Materials Analysis Center, Korea Institute of Science and Technology) ;
  • Park, Kyung-Bong (The Center for Green Materials Technology, Andong University) ;
  • Choi, Ji-Won (Electronic Materials Center, Korea Institute of Science and Technology)
  • 투고 : 2010.03.12
  • 심사 : 2010.06.15
  • 발행 : 2010.06.30
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초록

CCS방법이 적용된 off-axis RF 마그네트론 스퍼터를 이용하여 증착된 $Ta_2O_5-SiO_2$의 유전체 박막에 관하여 연구를 하였다. 1500 ${\mu}m$ 의 간격으로 비유전율 및 유전손실을 측정하여 $Ta_2O_5-SiO_2$에 조성의 변화에 따른 유전특성의 변화를 나타내었다. 1MHz 에서 높은 유전상수(k~19.5) 와 낮은 유전손실(tan${\delta}$<0.05)을 보이는 영역들을 찾았는데, 이는 증착된 기판($75{\times}25mm^2$ sized Pt/Ti/$SiO_2$(100))에서 $SiO_2$/Si 타겟 영역으로부터 각각 16 mm, 22 mm 떨어진 영역에서 찾을 수 있었다.

The variations of dielectric properties of $Ta_2O_5-SiO_2$ continuous composition spread thin films prepared by off-axis radio-frequency magnetron sputtering were investigated. The dielectric maps of dielectric constant and loss were plotted via 1500 micron-step measuring. The specific points showing superior dielectric properties of high dielectric constant (k~19.5) and loss (tan${\delta}$<0.05) at 1 MHz were found in area of the distance of 16 mm and 22 mm apart from $SiO_2$ side in $75{\times}25mm^2$ sized Pt/Ti/$SiO_2$/Si(100) substrates.

키워드

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