• Journal of Sensor Science and Technology
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• v.21 no.4
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• pp.263-269
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• 2012

Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and $250^{\circ}C$ were explored to find excellent electrical and optical properties. The AZO thin film deposited at $100^{\circ}C$ had the lowest resistivity, $9{\times}10^{-4}{\Omega}$ cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.35-40
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• 2010

The variations of dielectric properties of $Ta_2O_5-SiO_2$ continuous composition spread thin films prepared by off-axis radio-frequency magnetron sputtering were investigated. The dielectric maps of dielectric constant and loss were plotted via 1500 micron-step measuring. The specific points showing superior dielectric properties of high dielectric constant (k~19.5) and loss (tan${\delta}$<0.05) at 1 MHz were found in area of the distance of 16 mm and 22 mm apart from $SiO_2$ side in $75{\times}25mm^2$ sized Pt/Ti/$SiO_2$/Si(100) substrates.