DOI QR코드

DOI QR Code

라만 분석을 통한 비정질 실리콘 박막의 고온 고상 결정화 거동

Behavior of Solid Phase Crystallization of Amorphous Silicon Films at High Temperatures according to Raman Spectroscopy

  • 홍원의 (홍익대학교 공과대학 신소재 공학과) ;
  • 노재상 (홍익대학교 공과대학 신소재 공학과)
  • Hong, Won-Eui (Department of Materials Science and Engineering, Hongik University) ;
  • Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University)
  • 발행 : 2010.02.28

초록

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

키워드

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