Short-Channel Bulk-Type MOSFET의 문턱전압 도출을 위한 해석적 모델

An Analytical Model for Deriving The Threshold Voltage of a Short-channel Bulk-type MOSFET

  • 양진석 (홍익대학교 전자전기공학부) ;
  • 오영해 (홍익대학교 전자전기공학부) ;
  • 서정하 (홍익대학교 전자전기공학부)
  • Yang, Jin-Seok (School of Electronic & Electrical Eng., Hongik Univ.) ;
  • Oh, Young-Hae (School of Electronic & Electrical Eng., Hongik Univ.) ;
  • Suh, Chung-Ha (School of Electronic & Electrical Eng., Hongik Univ.)
  • 투고 : 2010.06.11
  • 심사 : 2010.11.26
  • 발행 : 2010.12.25

초록

본 논문에서는 단 채널 bulk-type MOSFET의 문턱전압의 표현식을 해석적으로 도출하는 모텔을 제시하였다 게이트 절연층 내에서는 2차원 Laplace 방정식을, silicon body 내 공핍층에서는 2차원 Poisson 방정식을 Fourier 계수 방법을 이용하여 풀어냈으며, 이로부터 채날 표면전위의 최소치를 도출하고 문턱 전압 표현 식을 도출하였다. 도출된 문턱전압 표현식을 모의 실험한 결과, 소자의 각종 parameter와 bias 전압에 대한 의존성을 비교적 정확히 도출할 수 있음을 확인할 수 있었다.

In this paper, a new analytical model for deriving the threshold voltage of a short-channel bulk-type MOSFET is suggested. Using the Fourier coefficient method, the Laplace equation in the oxide region and the Poisson equation in the depleted silicon region have been solved two-dimensionally. Making use of them, the minimum surface potential is derived to describe the threshold voltage. Simulation results show good agreement with the dependencies of the threshold voltage on the various device parameters and applied bias voltages.

키워드

참고문헌

  1. ITRS, International Technology Roadmap for semiconductors; 2008.
  2. Baccarani G, Wodman MR, Dennard R H. "Generalized scaling theory and it's application a 1/4 micrometer MOSFET design", IEEE Trans. Electron Devices, vol. 31(4), pp.452, 1984. https://doi.org/10.1109/T-ED.1984.21550
  3. L. D. Yau, "A Simple theory to predict the threshold voltage of short-channel IGFET's", Solid-State Electron, vol. 26, pp.1059, 1974.
  4. Toru Toyabe, Shojioro Asai, "Analytical Models of Threshold Voltage and Breakdown Voltage of Short-Channel MOSFET's Derived from Two- Dimensional Analysis", IEEE Trans. Electron Devices, vol. 26(4), pp.453, 1979. https://doi.org/10.1109/T-ED.1979.19448
  5. K. N. Ratnakumar, James D. Meindl, "Short- Channel MOST Threshold Voltage Model" IEEE Journal of Solid State Circuits, vol. 17(5), pp.937, 1982. https://doi.org/10.1109/JSSC.1982.1051843
  6. D. R. Poole, D. L. Kwong, "Two-Dimensional Analytical Modeling of Threshold Voltages of Short-Channel MOSFET's", IEEE Electron Devices Letter, vol. 5(11), pp.443, 1984. https://doi.org/10.1109/EDL.1984.25981
  7. Chun-Hsing Shih, Yi-Min Cheb, Chenhsin Lien, "An analytical threshold voltage roll-off equation for MOSFET by using effective-doping model", Solid-State Electron, vol. 49, pp.808, 2005. https://doi.org/10.1016/j.sse.2005.01.021
  8. Anil Kumar, Toshiharu Nagumo, Gen Tsutsui, Toshiro Hiramoto, "Analytical model of body factor in short channel bulk MOSFETs for low voltage applications", Solid-State Electron, vol. 48, pp.1763, 2004. https://doi.org/10.1016/j.sse.2004.05.011
  9. Raghunath Murali, L. Austin, Lihui Wang, D. Meindl, "Short-Channel Modeling of Bulk Accumulation MOSFETs", IEEE Trans. Electron Devices, vol. 51(6), pp.940, 2004. https://doi.org/10.1109/TED.2004.828276
  10. Raghunath Murali, James D. Meindl, "Modeling the effect of source/drain junction depth on bulk-MOSFET scaling", Solid-State Electron, vol.51 pp.823, 2007. https://doi.org/10.1016/j.sse.2007.03.012
  11. MEDICI Two Dimensional Device Simulation Program, Version 2002. 4, User Manual. Avant! corporation, TCAD Business Unit.
  12. Zhi-Hong Liu, Cheming Hu, Jian-Hui Huang, Tung-Yi Chan, Min-Chie Jeng, Ping K. KO, Y. C. Cheng, "Threshold Voltage Model for Deep- Submicrometer MOSFET's", IEEE Trans. Elect- ron Devices, vol. 40(1), pp.86, 1993. https://doi.org/10.1109/16.249429