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RF 마그네트론 스퍼터링을 이용한 p 타입 투명전도 산화물 SrCu2O2 박막의 제조

Fabrication of P-type Transparent Oxide Semiconductor SrCu2O2 Thin Films by RF Magnetron Sputtering

  • Seok, Hye-Won (Korea Institute of Ceramic Engineering &Technology (KICET)) ;
  • Kim, Sei-Ki (Korea Institute of Ceramic Engineering &Technology (KICET)) ;
  • Lee, Hyun-Seok (Korea Institute of Ceramic Engineering &Technology (KICET)) ;
  • Lim, Tae-Young (Korea Institute of Ceramic Engineering &Technology (KICET)) ;
  • Hwang, Jong-Hee (Korea Institute of Ceramic Engineering &Technology (KICET)) ;
  • Choi, Duck-Kyun (Department of Materials Science and Engineering, Han Yang University)
  • 투고 : 2010.10.31
  • 심사 : 2010.11.19
  • 발행 : 2010.12.27

초록

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

키워드

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