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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors

  • Cheong, Woo-Seok (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Lee, Jeong-Min (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Lee, Jong-Ho (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • KoPark, Sang-Hee (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Yoon, Sung-Min (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Byun, Chun-Won (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Yang, Shin-Hyuk (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Chung, Sung-Mook (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Cho, Kyoung-Ik (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Hwang, Chi-Sun (Convergence Components & Materials Research Laboratory, ETRI)
  • Received : 2009.06.16
  • Accepted : 2009.08.26
  • Published : 2009.12.31
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Abstract

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

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References

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