참고문헌
- F. Masuoka, M. Assano, H. Iwahashi, T. Komuro, and S. Tanaka, "A New Flash EEPROM Cell Using Triple Polysilicon Technology," IEEE IEDM Tech. Dig., 464-67 (1984)
- R. Bez, E. Camerlenghi, A. Modelli, and A. Visconi, "Introduction to Flash Memory," Proc IEEE, 91 489-502 (2003) https://doi.org/10.1109/JPROC.2003.811702
- F. Masuoka. M. Momodomi, Y. Iwata, and R. Shirora, "New Ultra High Density EPROM and Flash EEPROM with NAND Structured Cell," IEDM Tech. Dig., 552-55 (1987).
- C. T. Swift, G. L. Chindalore, K. Harber, T. S. Harp, A. Hoefler, C. M. Hong, P. A. Ingersoll, C. B. Li, E. J. Prinz, and J. A. Yater, "An Embedded 90 nm SONOS Nonvolatile Memory Utilizing Hot Electron Programming and Uniform Tunnel Erase," IEDM Tech. Dig., 927-30 (1987) https://doi.org/10.1109/IEDM.2002.1175988
- X. Wang, J. Liu, W. Bai, and D. L. Kwang, "A Novel MONOS-type Nonvolatile Memory Using High-k Dielectrics for Improved Data Retention and Programming Speed," IEEE Trans. Electron Devices, 51 [4] 597-602 (2004) https://doi.org/10.1109/TED.2004.824684
-
C. H. Cheng and J. Y. M. Lee, "Metal-High-k-High-k-Oxide- Semiconductor Capacitors and Field Effect Transistors Using Al/
$La_2O_3/Ta_2O_3/SiO_2$ /Si Structure for Nonvolatile Memory Applications," Appl. Phys. Lett., 91 192903-1-192903-3 (2007). https://doi.org/10.1063/1.2800821 - T. M. Pan, T. Y. Yu, and Y. Y. Hsieh, "Comparison of Structural and Electrical Properties of Praseodymium Oxide and Praseodymium Titanium Oxide Charge Trapping Layer Memories," J. Appl. Phys., 102 074111-1-074111-7 (2007). https://doi.org/10.1063/1.2786102
- Y. N. Tan, W. K. Chim, B. J. Cho, and W. K. Choi, "Over- Erase Phenomenon in SONOS-type Flash Memory and Its Minimization Using a Hafnium Oxide Charge Storage Layer," IEEE Trans. Electron Devices, 51 [7] 1143-46 (2004) https://doi.org/10.1109/TED.2004.829861
- D. Ielmini, A. S. Spinelli, and A. L. Lacaita, "Recent Developments on Flash Memory Reliability," Microelectron. Eng., 80 321-28 (2005) https://doi.org/10.1016/j.mee.2005.04.085
- J. H. Jun, D. J. Choi, K. H. Kim, K. Y. Oh, and C. J. Hwang, "Effect of Structural Properties on Electrical Properties of Lanthanum Oxide Thin Film as a Gate Dielectric," Jpn. J. Appl. Phys., 42 3519-22 (2003) https://doi.org/10.1143/JJAP.42.3519
-
J. H. Jun, C. H. Wang, D. J. Won, and D. J. Choi, 'Structural and Electrical Properties of a
$La_2O_3$ Thin Film as a Gate Dielectric,' J. Kor. Phys. Soc., 41 [6] 998-1002 (2002) -
H. J. Kim, S. Y. Cha, and D. J. Choi, 'Memory Characteristics of
$Al_2O_3/La_2O_3/Al_2O_3$ Multi-layer Films with Various Blocking and Tunnel Oxide Thicknesses,' Mat. Sci. Semicon. Proc., submitted (2008)