Reflectance spectrum properties of DBR and microcavity porous silicon

Distributed Bragg Reflector, Microcavity 구조를 갖는 다공질규소의 반사율 스펙트럼

  • Published : 2009.12.31

Abstract

In this paper, we made three kinds of porous silicon samples (single layer, distributed Bragg reflector, and microcavity) by electrochemical etching p-type silicon substrate. And then, we investigated their reflectance spectrum properties. We found that the number of fringe patterns and the maximum reflectivity of porous silicon multilayer increased compared with a porous silicon sinlge layer. In addition, we can observe that the DBR (distributed Bragg reflector) porous silicon has a full-width at half-maximum about 33 nm which is narrower than the porous silicon single layer and porous silicon microcavity.

본 연구에서는 p형 단결정 규소 기판을 에칭시켜 다층구조를 갖는 DBR 및 Microcavity 다공질규소를 제작하고, 그 반사율 스펙트럼을 조사하였다. 그 결과 다층구조를 갖는 다공질규소의 반사율 스펙트럼에서 프린지 패턴의 수는 단일층 다공질규소의 경우보다 상대적으로 많았으며, 특정 파장에서 반사율은 90 % 이상으로 나타났다. 그리고 DBR 다공질규소에서 최대 반사율 봉우리의 FWHM 값은 33 nm로 매우 좁게 나타났다.

Keywords

References

  1. L.T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers", Appl. Phys. Lett. 57 (1990) 1046 https://doi.org/10.1063/1.103561
  2. L.T. Canham, "Properties of Porous Silicon", L.T. Canham, Ed. (IEE Inspec, London, 1997) p. 83
  3. L.T. Canham, T.I. Cox, A. Loni and A.J. Simons, "Progress towards silicon optoelectronics using porous silicon technology", Applied Surface Science 102 (1996) 436 https://doi.org/10.1016/0169-4332(96)00094-3
  4. K.D. Hirschaman, L. Tsybeskov, S.P. Duttagupta and P.M. Fauchet, "Silicon-based light-emitting devices integrated into microelectronic circuits", Nature 384 (1996) 338 https://doi.org/10.1038/384338a0
  5. C.S. Solanki, R.R. Bilyalov, J. Portmans, J. Nijs and R. Mertens, "Porous silicon layer transfer processes for solar cells", Solar Energy Materials and Solar Cells 83 (2004) 101 https://doi.org/10.1016/j.solmat.2004.02.016
  6. H. Fll, M. Christophersen, J. Carstensen and G. Hassw, "Formation and application of porous silicon", Materials Science and Engineering R39 (2002) 93 https://doi.org/10.1016/S0927-796X(02)00090-6
  7. Y.-Y. Kim, S.-K. Lee, H.-J. Kim, S.-H. Park, E.-J. Ahn and K.-W. Lee, "Fabrication of a porous-silicon-based ethanol sensor", SAEMULLI 51 (2005) 243
  8. C. Barratto, G. Faglia, G. Sberveglieri, Z. Gaburro, L. Pancheri, C. Oton and L. Pavesi, "Multiparametric porous silicon sensors", Sensors 2 (2002) 121 https://doi.org/10.3390/s20300121
  9. I. Ferreira, E. Fortunato and R. Martins, "Ethanol vapour detector based in porous a-Si:H films produced by FW-CVD technique", Sensors and Actuators B 100 (2004) 236 https://doi.org/10.1016/j.snb.2004.01.008
  10. Y.-Y. Kim, H.-J. Kim and K.-W. Lee, "The potential for alcohol-containing gas sensors based on DBR porous silicon", J. Korean Phys. Soc. 55 (2009) 415 https://doi.org/10.3938/jkps.55.415
  11. L. Pavesi, "Porous silicon dielectric multilayers and microcavities", La Rivista del Nuovo Cimento 20 (1997) 1 https://doi.org/10.1007/BF02877374
  12. M. Araki, H. Koyama and N. Koshida, "Optical cavity based on porous silicon superlattice technology", Jpn. J. Appl. Phys. 35 (1996) 1041 https://doi.org/10.1143/JJAP.35.1041
  13. Y.-Y. Kim, J.-H. Jeon, E.-J. Ahn and K.-W. Lee, "Photoluminescence resonance properties of a porous silicon microcavity", SAEMULLI 44 (2002) 224
  14. M.G. Berger, M. Thonissen, R. Arens-Fischer, H. Munder, H. Luth, M. Arbtzen and W. Theiss, "Investigation and design of optical properties of porosity superlattices", Thin Solid Films 255 (1995) 313 https://doi.org/10.1016/0040-6090(94)05617-M
  15. M. Bruchez, M. Moronne, P. Gin, S. Weiss and A.P. Alivisatos, "Semiconductor nanocrystals as fluorescent biological labels", Science 281 (1998) 2013 https://doi.org/10.1126/science.281.5385.2013
  16. S. Jang, Y. Koh, J. Kim, J. Park, C. Park, S.J. Kim, S. Cho, Y.C. Ko and H. Sohn, "Detection of organophosphates based on surface-modified DBR porous silicon using LED light", Materials Letters 62 (2008) 552 https://doi.org/10.1016/j.matlet.2007.06.009