초록
The passivation films with epoxy layer on LiF, $SiN_x$ and LiF/$SiN_x$ inorganic layer were fabricated on OLED to protect device from the direct damage of $O_2$ and $H_2O$ and to apply for a buffer layer between OLED device and passivation multi-layer with organic/inorganic hybrid structure as to diminish the thermal stress and expansion. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The device structure was multi-layer of ITO(150 nm) / ELM200_HIL(50 nm) / ELM002_HTL(30 nm) / $Alq_3$: 1 vol.% Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). LiF/epoxy applied as a protective layer didn't contribute to the improvement of life time. While in case of $SiN_x$/epoxy, damage was done in the passivation process because of difference in heat expansion between films which could occur during the formation of epoxy film. Using LiF/$SiN_x$/epoxy improved lifetime significantly without suffering damage in the process of forming films, therefore, the best structure of passivation film with inorganic/epoxy layers was LiF/$SiN_x$/E1.
