Journal of Magnetics

  • 제14권4호
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  • Pages.172-174
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  • 2009
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  • 1226-1750(pISSN)
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  • 2233-6656(eISSN)
한국자기학회 (The Korean Magnetics Society)
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Magnetoresistance of Planar Ferromagnetic Junction Defined by Atomic Force Microscopy

  • Yu, D.S. (Department of Physics and Institute of Fundamental Physics, Sejong University) ;
  • Jerng, S.K. (Department of Physics and Institute of Fundamental Physics, Sejong University) ;
  • Kim, Y.S. (Department of Physics and Institute of Fundamental Physics, Sejong University) ;
  • Chun, S.H. (Department of Physics and Institute of Fundamental Physics, Sejong University)
  • 발행 : 2009.12.31
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초록

Nanolithography by atomic force microscope local oxidation was applied to the fabrication of planar-type Ni/Ni oxide/Ni junctions from 10 nm-thick Ni films. The junction characteristics were sensitive to the lithography conditions such as the bias voltage. Successful oxidation produced junctions of nonlinear current-voltage characteristics, implying the formation of oxide barriers. Magnetoresistance (MR) at low temperatures resembled that of spin valves.

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참고문헌

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