Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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High Mobility Characteristics of Strained-Si-on-insulator (sSOI) Metal-oxide-semiconductors Field-effect-transistors (MOSFETs)

높은 이동도 특성을 가지는 Strained-Si-on-insulator (sSOI) MOSFETs

  • 김관수 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Published : 2008.08.01
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Abstract

We investigated the characteristics of Strained-Si-on-Insulator (sSOI) MOSFETs with 0.7% tensile strain. The sSOI MOSFETs have superior subthreshold swing under 70 mV/dec and output current. Especially, the electron and hole were increased in sSOI MOSFET. The electron and hole mobility in sSOI MOSFET were 286$cm^2/Vs$ and 151$cm^2/Vs$, respectively. The carrier mobility enhancement is due to the subband splitting by 0.7% tensile strain.

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References

  1. S. Tagaki, T. Mizuno, T. Tezuka, N. Sugiyama, T. Numata, K. Usuda, Y. Moriyama, S. Nakaharai, J. Koga, A. Tanabe, N. Hirashit, and T. Maeda, 'Channel Structure Design, Fabrication and Carrier Transport Properties of Strained-Si/SiGe-on-insulator (Strained-SOI) MOSFETs', IEDM, p. 57, 2003
  2. L. J. Huang, J. O. Chu, S. Goma, C. P. D'Emic, S. J. Koester, D. F. Canaperi, P. M. Mooney, S. A. Cordes, J. L. Speidell, R. M. Anderson, and H.-S. Phillip Wong, 'Carrier Mobility Enhancement in Strained Si-on- insulator Fabricated by Wafer Bonding', IEEE VLSI Symp., p. 57, 2001
  3. D. R. Black, J. C. Woicik, M. Erdtmann, and T. A. Langdo, 'Imaging defect in strained-silicon thin films by glancing-incidence', Appl. Phys. Lett., Vol. 88, p. 224102, 2006 https://doi.org/10.1063/1.2209411
  4. G. Xia, M. Canonico, and J. L. Hoyt, 'Interdiffusion in strained Si/strained SiGe epitaxial heterostructures', Semicond. Sci. Technol., Vol. 22, p. 55, 2007 https://doi.org/10.1088/0268-1242/22/1/S13
  5. T. A. Langdo, M. T. Currie, Z.-Y. Cheng, J. G. Fiorenza, M. Erdtmann, G. Braithwaite, C. W. Leitz, C. J. Vineis, J. A. Carlin, A. Lochtefeld, M. T. Bulsara, I. Lauer, D. A. Antoniadis, and M. Somerville, 'Strained Si on insulator technology: from materials to devices', Solid-state Electronics, Vol. 48, p. 1357, 2004 https://doi.org/10.1016/j.sse.2004.02.013
  6. T. Numata, T. Mizuno, T. Tezuka, J. Koga, and S. Takagi, 'Control of threshold-voltage and short-channel effects in ultrathin strained-SOI CMOS devices', IEEE Trans. Electron Devices, Vol. 52, No. 8, p. 1780, 2005 https://doi.org/10.1109/TED.2005.851840
  7. S. Tagaki, T. Mizuno, T. Tezuka, N. Sugiyama, S. Nakaharai, T. Numata, J. Koga, and K. Uchida, 'Sub-band structure engineering for advanced CMOS channels', Solid-State Electronics, Vol. 49, p. 684, 2005 https://doi.org/10.1016/j.sse.2004.08.020