전자공학회논문지 IE

The Institute of Electronics and Information Engineers (대한전자공학회)
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Performance Degradation of RF SOI MOSFETs in LNA Design Guide Line

RF SOI MOSFETs의 성능저하에 의한 LNA 설계 가이드 라인

  • 엄우용 (인하공업전문대학 디지털전자정보과) ;
  • 이병진 (인천대학교 전자공학과)
  • Published : 2008.06.25
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Abstract

In this work, RF performance degradation due to hot carrier effects in SOI MOSFET have been measured and analyzed. The LNA that designed at $V_{GS}=0.8V$, f=2.5GHz, gain is 16.51dB and noise figure is 1.195dB. After stress at SOI, the LNA's gain and noise figure change of 15.3dB and 1.44dB with before stress.

본 연구에서는 SOI MOSFET를 hot carrier 현상에 의한 RF 성능 저하를 측정 분석하였다. $V_{GS}=0.8V$, f=2.5GHz에서 설계되어 진 LNA의 이득은 16.51dB이고 잡음지수는 1.195dB였다. SOI에서 스트레스 후에는 LNA의 이득과 잡음지수가 스트레스전보다 각각 15.3dB, 1.44dB로 변화하였다.

Keywords

References

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