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The Comparison to Physical Properties of Large Size Indium Zinc Oxide Transparent Conductive Layer

대면적 상온 Indium Zinc Oxide 투명 도전막의 물성 특성 비교

  • Joung, Dae-Young (Samsung Electronics, Co., Ltd., LCD Business, R&D Center) ;
  • Lee, Young-Joon (Samsung Electronics, Co., Ltd., LCD Business, R&D Center) ;
  • Park, Joon-Yong (Samsung Electronics, Co., Ltd., LCD Business, TFT 3 Part(Mobile)) ;
  • Yi, Jun-Sin (SungKyunKwan University, School of Information & Communication Engineering, Information & Communication Device Lab.)
  • 정대영 (삼성전자 LCD 총괄 차세대 연구소) ;
  • 이영준 (삼성전자 LCD 총괄 차세대 연구소) ;
  • 박준용 (삼성전자 LCD 총괄 TFT3 파트(Mobile)) ;
  • 이준신 (성균관대학교 정보통신공학부 정보통신소자 Lab.)
  • Published : 2008.02.29

Abstract

An Indium Zinc Oxide(IZO) transparent conductive layer was deposited on a large size glass substrate by using magnetron dc sputtering method with varying a deposition temperature. As the deposition temperature decreased to a room temperature, the sheet resistance of IZO film increased. But this deposition temperature range is included in an applicable to a device. From a standpoint of the sheet resistance, the differences of the sheet resistance were not great and the uniformity of the layer was uniformed around 10%. Crystallization particles were shown on the surface of the layer as deposition temperature increased, but these particles were not shown on the surface of the layer as deposition temperature decreased to the room temperature. It didn't make a scrap of difference in a transmittance of varying deposition temperature. Therefore, it is concluded that IZO thin film manufactured by the room temperature deposition condition can be used as a large size transparent conductive layer of a liquid crystal display device.

Keywords

References

  1. A. C. Arias, L. S. Roman, T. Kugler, R. Toniolo, M. S. Meruvia, I. A. Hummelgen, Thin Solid Film, 371 (2000) 201 https://doi.org/10.1016/S0040-6090(00)00967-6
  2. F. Zhu, K. Zhang, B. L. Low, S. F. Lim, S. J. Chua, Materials Science and Engineering, B85 (2001) 114
  3. D. Vaufrey, M. B. Khalifa, M. P. Besland, J. Tardy, C. Sandu, M. G. Blanchin, J. A. Roger, Materials Science and Engineering, C21 (2002) 265
  4. A. Kaijou, M. Ohyama, M. Shibata, K. Inoue, U. S. Patent No. 5, 972,527 (1999)
  5. T. C. Gorjanc, D. Leong, C. Py, D. Roth, Thin Solid Films, 413 (2002) 181 https://doi.org/10.1016/S0040-6090(02)00425-X
  6. J. Tashiro, A. Sasaki, S. Akiba, S. Satoh, T. Watanabe, H. Funakubo, M. Yoshimot, Thin Solid Films, 415, 272 (2002) https://doi.org/10.1016/S0040-6090(02)00623-5
  7. S. H. Park, H. M. Kim, B. R. Rhee, E. Y. Gho, Jpn. J. Appl. Phys., 40 (2001) 1429 https://doi.org/10.1143/JJAP.40.1429
  8. H. M. Kim, S. K. Jeung, J. S. Ahn, Y. J. Kang, C. K. Je, Jpn. J. Appl. Phys., 42 (2003) 1 https://doi.org/10.1143/JJAP.42.1
  9. K. Noda, H. Sato, H. Itaya, M. Yamada, Jpn. J. Appl. Phys., 42 (2003) 1 https://doi.org/10.1143/JJAP.42.1
  10. K. H. Kim, S. H. Park, J. J. Kim, H. M. Kim, Saemuli, 46(4) (2003) 213
  11. H. N. Cho, Yue Long Li, S. R. Min, C. W. Chung, J. Korean Ind. Eng. Chem., 17(6) (2006) 644
  12. J. S. Hong, J. K. Yoon, B. R. Rhee, S. H. Park, J. J. Kim, H. M. Kim, Sae Mulli, 48(4) (2004) 339
  13. B. Shin, C. W. Chung, J. Korean Ind. Eng. Chem., 15(3) (2004) 300
  14. C. Y. Choe, D. Y. Ma, W. D. Park, G. M. Choe, K. W. Kim, Basic of Thin Film Technology, p. 173,188, Iljin, Seoul, (2001) 310
  15. C. H. Park, H. J. Lee, H. B. Kim, D. H. Kim, G. H. Lee, J. Kor. Inst. Surf. Eng., 38(5) (2005) 188