Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Fabrication and Characterization of FET Device Using ZnO Nanowires

ZnO 나노와이어를 이용한 FET 소자 제작 및 특성 평가

  • Kim, K.W. (Department of Advanced Materials Engineering, CBITRC, Chungbuk National University) ;
  • Oh, W.S. (Department of Advanced Materials Engineering, CBITRC, Chungbuk National University) ;
  • Jang, G.E. (Department of Advanced Materials Engineering, CBITRC, Chungbuk National University) ;
  • Park, D.W. (Fusion Biotechnology Research Center, Korea Research Institute of Chemical Technology) ;
  • Lee, J.O. (Fusion Biotechnology Research Center, Korea Research Institute of Chemical Technology) ;
  • Kim, B.S. (Department of Chemical Engineering, Chungbuk National University)
  • 김경원 (충북대학교 공과대학 신소재공학과) ;
  • 오원석 (충북대학교 공과대학 신소재공학과) ;
  • 장건익 (충북대학교 공과대학 신소재공학과) ;
  • 박동원 (한국화학연구원 융합바이오연구센터) ;
  • 이정오 (한국화학연구원 융합바이오연구센터) ;
  • 김범수 (충북대학교 공과대학 화학공학과)
  • Published : 2008.02.29
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Abstract

The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the $I_{ds}-V_{ds}$ curves are dependent on the gate voltage.

Keywords

References

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