JSTS:Journal of Semiconductor Technology and Science

  • 제8권1호
  • /
  • Pages.104-109
  • /
  • 2008
  • /
  • 1598-1657(pISSN)
  • /
  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지
DOI QR코드

DOI QR Code

A New Semi-Empirical Model for the Backgating Effect on the Depletion Width Modulation in GaAs MESFET's

  • Murty, Neti V.L. Narasimha (Center for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University) ;
  • Jit, S. (Center for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University)
  • 발행 : 2008.03.30
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

A simple and efficient way of modeling backgating in GaAs MESFET's is presented through depletion width modulation of Schottky junction and channel-substrate interface. It is shown semi-empirically that such a modulation of depletion widths causes serious troubles in designing precision circuits since backgating drastically reduces threshold voltage of MESFET as well as drain current. Finally, some of the results are compared with reported experimental results. This model may serve as a starting point for rigorous characterization of backgating effect on various device parameters of GaAs MESFET's.

키워드

참고문헌

  1. Y. Ohno and N. Goto, 'Mechanism of electrostatic potential conduction in semi insulating substrates,' J. Appl. Phys, vol. 66, pp. 1217-1221, 1990 https://doi.org/10.1063/1.343466
  2. C. Kocot and C. A. Stolte, 'Backgating in GaAs MESFET's,' IEEE Trans. Microwave Theory Tech, vol. 30, pp. 963-968, 1982 https://doi.org/10.1109/TMTT.1982.1131184
  3. K. Shenai and R. W. Dutton, 'Channel-buffer (substrate) interface phenomenon in GaAs MESFET's fabricated by molecular-beam epitaxy,' IEEE Trans. Electron Devices, vol. 35, pp. 590-603, 1988 https://doi.org/10.1109/16.2501
  4. A. E. Bond, C. K. Lin, M. H. McDougal, P. D. Dapkus, K. Kaviani, O. Adamczyk, and R. Nottenburg, 'Backgating reduction in MESFETs using an AlAs native oxide buffer layer,' Electron Lett., vol. 32, pp. 2271-2273, 1996 https://doi.org/10.1049/el:19961529
  5. J. Wu, Z. G. Wang, T. W. Fan, and L. Y. Lin, 'Sidegating effect on Schottky contact in ionimplanted GaAs,' J. Appl. Phys., vol. 78, pp. 7422-7423, 1995 https://doi.org/10.1063/1.360399
  6. E. B. Stoneham, P. A. J O'Sullivan, S. W. Mitchell, and A. F. Podell, 'Working with nine different foundries,' 12th annual GaAs IC Symp.,1990 Tech Digest, pp. 11-14, 1990
  7. Y. H. Chen, Z. G. Wang, J. J. Qian, and M. F. Sun, 'Threshold behavior in backgating in metalsemiconductor field effect transistor: Induced by limitation of channel-substrate junction to leakage current,' J. Appl. Phys., vol. 81, pp. 511-515, 1997 https://doi.org/10.1063/1.364129
  8. S. M. Sze, Physics of Semiconductor Devices $2^nd$ ed., New Delhi: Wiley, 1999
  9. Michael Shur, GaAs Devices and Circuits, New York: Plenum press, 1986
  10. R. Anholt and T. W. Sigmon, 'Mechanism of EL2 effects on GaAs field-effect transistor threshold voltages', J. Appl. Phys., vol. 62, pp. 3995-3997, 1987 https://doi.org/10.1063/1.339825