[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5573/JSTS.2008.8.1.104

A New Semi-Empirical Model for the Backgating Effect on the Depletion Width Modulation in GaAs MESFET's

Murty, Neti V.L. Narasimha (Center for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University)
Jit, S. (Center for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University)

Publication Information

JSTS:Journal of Semiconductor Technology and Science / v.8, no.1, 2008 , pp. 104-109 More about this Journal

Abstract

A simple and efficient way of modeling backgating in GaAs MESFET's is presented through depletion width modulation of Schottky junction and channel-substrate interface. It is shown semi-empirically that such a modulation of depletion widths causes serious troubles in designing precision circuits since backgating drastically reduces threshold voltage of MESFET as well as drain current. Finally, some of the results are compared with reported experimental results. This model may serve as a starting point for rigorous characterization of backgating effect on various device parameters of GaAs MESFET's.

Keywords

GaAs MESFET; semi-insulating substrate; backgating effect; depletion width modulation; threshold voltage;

Citations & Related Records

Reference

1	C. Kocot and C. A. Stolte, 'Backgating in GaAs MESFET's,' IEEE Trans. Microwave Theory Tech, vol. 30, pp. 963-968, 1982 DOI ScienceOn
2	J. Wu, Z. G. Wang, T. W. Fan, and L. Y. Lin, 'Sidegating effect on Schottky contact in ionimplanted GaAs,' J. Appl. Phys., vol. 78, pp. 7422-7423, 1995 DOI
3	R. Anholt and T. W. Sigmon, 'Mechanism of EL2 effects on GaAs field-effect transistor threshold voltages', J. Appl. Phys., vol. 62, pp. 3995-3997, 1987 DOI
4	S. M. Sze, Physics of Semiconductor Devices $2^nd$ ed., New Delhi: Wiley, 1999
5	Y. Ohno and N. Goto, 'Mechanism of electrostatic potential conduction in semi insulating substrates,' J. Appl. Phys, vol. 66, pp. 1217-1221, 1990 DOI
6	A. E. Bond, C. K. Lin, M. H. McDougal, P. D. Dapkus, K. Kaviani, O. Adamczyk, and R. Nottenburg, 'Backgating reduction in MESFETs using an AlAs native oxide buffer layer,' Electron Lett., vol. 32, pp. 2271-2273, 1996 DOI ScienceOn
7	K. Shenai and R. W. Dutton, 'Channel-buffer (substrate) interface phenomenon in GaAs MESFET's fabricated by molecular-beam epitaxy,' IEEE Trans. Electron Devices, vol. 35, pp. 590-603, 1988 DOI ScienceOn
8	Michael Shur, GaAs Devices and Circuits, New York: Plenum press, 1986
9	E. B. Stoneham, P. A. J O'Sullivan, S. W. Mitchell, and A. F. Podell, 'Working with nine different foundries,' 12th annual GaAs IC Symp.,1990 Tech Digest, pp. 11-14, 1990
10	Y. H. Chen, Z. G. Wang, J. J. Qian, and M. F. Sun, 'Threshold behavior in backgating in metalsemiconductor field effect transistor: Induced by limitation of channel-substrate junction to leakage current,' J. Appl. Phys., vol. 81, pp. 511-515, 1997 DOI ScienceOn