전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제57권4호
  • /
  • Pages.653-659
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  • 2008
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

고출력 트랜지스터 패키지 설계를 위한 새로운 와이어 본딩 방식

A New Wire Bonding Technique for High Power Package Transistor

  • 발행 : 2008.04.01
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초록

This paper describes the design of high power transistor packages using high power chip transistor dies, chip capacitors and a new wire bonding technique. Input impedance variation and output power performances according to wire inductance and resistance for internal matching are also discussed. A multi crossing type(MCT) wire bonding technique is proposed to replace the conventional stepping stone type(SST) wire bonding technique, and eventually to improve the output power performances of high power transistor packages. Using the proposed MCT wire bonding technique, it is possible to design high power transistor packages with highly improved output power compared to SST even the package size is kept to be the same.

키워드

참고문헌

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