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A New Wire Bonding Technique for High Power Package Transistor  

Lim, Jong-Sik (순천향대 전기통신공학과)
Oh, Seong-Min ((주) RFHIC)
Park, Chun-Seon (순천향대 전기통신공학과)
Lee, Yong-Ho ((주) RFHIC)
Ahn, Dal (순천향대 전기통신공학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.57, no.4, 2008 , pp. 653-659 More about this Journal
Abstract
This paper describes the design of high power transistor packages using high power chip transistor dies, chip capacitors and a new wire bonding technique. Input impedance variation and output power performances according to wire inductance and resistance for internal matching are also discussed. A multi crossing type(MCT) wire bonding technique is proposed to replace the conventional stepping stone type(SST) wire bonding technique, and eventually to improve the output power performances of high power transistor packages. Using the proposed MCT wire bonding technique, it is possible to design high power transistor packages with highly improved output power compared to SST even the package size is kept to be the same.
Keywords
High power package; Wire bonding; DGS; Multi crossing wire bonding;
Citations & Related Records

Times Cited By SCOPUS : 1
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