A New Wire Bonding Technique for High Power Package Transistor
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Lim, Jong-Sik
(순천향대 전기통신공학과)
Oh, Seong-Min ((주) RFHIC) Park, Chun-Seon (순천향대 전기통신공학과) Lee, Yong-Ho ((주) RFHIC) Ahn, Dal (순천향대 전기통신공학과) |
1 | D.M. Keogh, J.C. LI, A.M. Conway, D. Qiao, S. Raychaudhuri, and P.M. Asbeck, "Anaylisys of GaN HBT Structures for High Power, High Efficiency Microwave Amplifiers" International Journal of High Speed Electronics and Systems, Vol. 14, No. 3 pp:831-836, 2004 DOI ScienceOn |
2 | Singhal, S., Brown, J.D., Borges, R., Piner, E., Nagy, W., & Vescan, A. "Gallium Nitride on silicon HEMTs for wireless infrastructure applications, thermal design and performance" European Microwave Week, 2002 |
3 | "150-W, 2.11-2.17 GHz Balanced Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device", FUJITSU APPLICATION NOTE(No 008) |
4 | W. Nagy, S. Singhal, R. Borges, J.W. Johnson, J.D. Brown, R. Therrien, A. Chaudhari, A.W. Hanson, J. Riddle, S. Booth, P. Rajagopal, E. L. Piner, K.J. Linthicum, "150 W GaN-on-Si RF Power Transistor", 2005 IEEE MTT-S International, pp:483-486 |
5 | John L.B. Walker, High Power GaAs FET Amplifiers. ARTECH HOUSE, 1993 |
6 | Helge O. Granberg, "A Two-stage 1kW Solid-state Linear Amplifier", Motorola semiconductor application note(AN758). |
7 | Steve C. Cripps, RF Power Amplifiers For Wireless Communications. ARTECH HOUSE, 2006 |
8 | Markus Mayer & Holger Arthaber, "RF Power Amplifier Design", Vienna University of Technology, 2001 |
9 | Hidenori Shimawaki and Hironobu Miyamoto, "GaN-based FETs for Microwave High-Power Applications" 13th GAAS Symposium2005. pp:377-380 |
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