DOI QR코드

DOI QR Code

Hydrogen and Alkali Ion Sensing Properties of Ion Implanted Silicon Nitride Thin Film

  • Park, Gu-Bum (Department of Electrical Engineering, Yuhan College)
  • 발행 : 2008.12.31

초록

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

키워드

참고문헌

  1. T. Matsuo, M. Esashi, and H. Abe, "ISFET's using inorganic gate thin films", IEEE Trans. on Electron Devices, Vol. 26, No. 11, p. 1856, 1979
  2. W. Moritz, B. H. van der Schoot, N. F. de Rooij, H. H. van den Vlekkert, and H. G. Lietecnberg, "A reference element based on a solid-state structure", Sensors & Actuators, Vol. B15, p. 228, 1993
  3. L. Bousse, D. Hafeman, and N. Tran, "Timedependence of the chemical response of silicon nitride surfaces", Sensors & Actuators, Vol. B1, p. 361, 1990
  4. J. Kimura, T. Kuriyama, and Y. Kawana, "An integrated sos/FET Multi-biosensor", Sensors & Actuators, Vol. 9, p. 373, 1986 https://doi.org/10.1016/0250-6874(86)80069-5
  5. J. Kimura, T. Murakami, T, Kuriyama, and I. Karube, "An integrated. multibiosensor for simultaneous amperometric and potantiometric. measurement", Sensors & Actuators, Vol. 15, p. 435, 1988 https://doi.org/10.1016/0250-6874(88)81512-9
  6. G. Eisenmann, "Glass Electrodes for Hydrogen and Other Cations", Marcel Dekker INC., New York, 1967
  7. H. Ryssel and I. Ruge, "Ion Implantation", Wiley & Sons, New York, 1986
  8. T. Mikolajick, R. Kuehnhold, and H. Ryssel, "The pH-sensing properties of tantalum pentoxide films fabricated by metal organic low pressure chemical vapor deposition", Sensors & Actuators, Vol. B44, p. 262, 1997
  9. A. Garde, W. Lane, and J. Aldermann, "Development of a pH-sensitive ISFET suitable for fabrication in a volume production environment", Sensors & Actuators, Vol. B26-27, p. 341, 1994
  10. K.-M. Chen, G.-H. Li, H. Lu, and L.-X. Chen, "Improvement of structural instability of the ion-. sensitive field-effect transistor(ISFET)", Sensors & Actuators, Vol. B12, p. 213, 1993
  11. L. Bousse, S. Mostarshed, B. van der Shott, and N. F. de Rooij, "Comparison of the hysteresis of $Ta_2O_5 $and $Si_3N_4$ pH-sensing insulators", Sensors& Actators, Vol. B17, p. 157, 1994
  12. D. E. Yates, S. Levine, and T. W. Healy, "Sitebinding model of the electrical double layer at the. oxides/water interface", J. Chem. Soc./Faraday Transaction, Vol. 170, p. 1807, 1974
  13. W. M. Siu and R. S. C. Cobbold, "Basic properties of the electrolyte-$SiO_2$-Si system: physical and theoretical aspects", IEEE Trans. on Electron Devices, Vol. 26, p. 1805, 1979 https://doi.org/10.1109/T-ED.1979.19690
  14. G. S Chung and K. S Kim, "Physical characteristics of polycrystalline 3C-SiC thin films grown by LPCVD", J. of KIEEME(in Korean), Vol. 19, No. 8, p. 732, 2006 https://doi.org/10.4313/JKEM.2006.19.8.732