Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Analysis of Channel Doping Concentration Dependent Subthreshold Characteristics for Double Gate MOSFET

이중게이트 MOSFET에서 채널도핑농도에 따른 문턱전압이하 특성 분석

  • 정학기 (군산대학교 전자정보공학부)
  • Published : 2008.10.30
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Abstract

In this paper, the influence of channel doping concentration, which the most important factor is as double gate MOSFET is fabricated, on transport characteristics has been analyzed in the subthreshold region. The analytical model is used to derive transport model based on Poisson equation. The thermionic omission and tunneling current to have an influence on subthreshold current conduction are analyzed, and the relationship of doping concentration and subthreshold swings of this paper are compared with those of Medici two dimensional simulation, to verify this model. As a result, transport model presented in this paper is good agreement with two dimensional simulation model, and the transport characteristics have been considered according to the dimensional parameters of double gate MOSFET.

본 연구에서는 이중게이트 MOSFET 제작시 가장 중요한 요소인 채널도핑농도가 문턱전압이하 영역에서 전송 특성에 미치는 영향을 분석하고자 한다. 포아슨방정식을 이용한 분석학적 전송모델을 사용하였다. 문턱전압이하의 전류전도에 영향을 미치는 열방사전류와 터널링전류에 대하여 분석하였으며 본 연구의 모델이 타당하다는 것을 입증하기 위하여 서브문턱스윙 값과 채널도핑 농도의 관계를 Medici 이차원 시뮬레이션값과 비교하였다. 결과적으로 본 연구에서 제시한 전송특성 모델이 이차원 시뮬레이션모델과 매우 잘 일치하였으며 이중게이트MOSFET의 구조적 파라미터에 따라 전송특성을 분석하였다.

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References

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