대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

향상된 전력효율을 갖는 GaInP/GaAs HBT 마이크로파 푸쉬-푸쉬 전압조정발진기

A Microwave Push-Push VCO with Enhanced Power Efficiency in GaInP/GaAs HBT Technology

  • 김종식 (광운대학교 전파공학과) ;
  • 문연국 (전자부품연구원 유비쿼터스컴퓨팅센터) ;
  • 원광호 (전자부품연구원 유비쿼터스컴퓨팅센터) ;
  • 신현철 (광운대학교 전파공학과)
  • Kim, Jong-Sik (Department of Radio Science and Engineering, Kwangwoon University) ;
  • Moon, Yeon-Guk (Ubiquitous Computing Center, Korea Electronics Technology Institute) ;
  • Won, Kwang-Ho (Ubiquitous Computing Center, Korea Electronics Technology Institute) ;
  • Shin, Hyun-Chol (Department of Radio Science and Engineering, Kwangwoon University)
  • 발행 : 2007.09.25
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초록

본 논문은 교차결합된 부성저항(cross-coupled negative-gm) 발진기 구조의 캐패시터 공통단자에서 2차 고조파를 얻어내는 새로운 푸쉬-푸쉬 기술에 대해 제안한다. 캐패시터 공통단자에서 2차 고조파가 생성되는 기본적인 이론은 에미터-베이스 접합 다이오드의 비선형 특성에 의한 Voltage clipping과 VCO core 트랜지스터의 Switching 동작 시 생기는 상승과 하상 시간의 차로써 설명된다. Simulation을 통한 비교연구를 통하여 본 논문에서 제안한 방법이 기존의 에미터 공통단자에서 출력을 얻어내는 방법보다 마이크로파 영역에서 전력효율이 더 뛰어나다는 것을 보였다. 본 기술을 적용한 Prototype MMIC VCO가 12-GHz와 17-GHz 대역에서 GaInP/GaAs HBT 공정을 사용하여 설계, 제작되었다. 출력 파워는 각각 -4.3dBm과 -5dBm이 측정되었고, Phase noise는 1-MHz offset에서 각각 -108 dBc/Hz와 -110.4 dBc/Hz가 측정되어 -175.8 dBc/Hz와 -184.3 dBc/Hz의 FoM(Figure-of-Merit)을 얻었다. 제작된 12-GHz와 17-GHz의 VCO Core는 각각 25.7mW(10.7mA/2.4V)와 13.1mW(4.4mA/3.0V)를 소모한다.

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.

키워드

참고문헌

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