• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.5
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• pp.98-104
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• 2009

In this paper, improved VCO(voltage controlled oscillator) with push-push structure and high impedance-inverter is designed and implemented. Two harmonic oscillators are combined into push-push structure. As a result, the fundamental suppression and the output power have been progressed. For the improved coupling characteristics between hair-pin resonator and two parallel microstrip line using high impedance inverter, the phase noise has been suppressed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.847-853
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• 2007

In this paper, a novel push-push voltage-controlled oscillator(VCO) using microstrip square open loop resonator and tunable negative resistance is presented. The microstrip square open loop resonator has the large coupling coefficient value, which makes a high Q value, and has reduced phase noise of VCO. The VCO with 1.8V power supply has phase noise of $-124.67{\sim}-122.67dBc/Hz\;@\;100 kHz$ in the tuning range, $5.744{\sim}5.859 GHz$. The FOM of this VCO is $-202.83{\sim}-201dBc/Hz\;@\;100 kHz$ in the same tuning range. When it has been compared with single-ended VCO using microstrip square open loop resonator, and push-push oscillator using microstrip line resonator, the reduced phase noise has been -8.51dB, and -33.67dB, respectively.

• Journal of electromagnetic engineering and science
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• v.11 no.4
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• pp.235-238
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• 2011

In this paper, a novel low phase noise voltage-controlled oscillator (VCO) using metamaterial structure and rat race coupler is presented for reducing the phase noise without the reduction of the frequency tuning range. The metamaterial structure has been realized by microstrip square open loop double split ring resonator (SRR). The rat race coupler shows slightly higher transmission compared to a Wilkinson combiner and is, therefore, used instead to improve the performances of VCO. By providing these unique modifications, the proposed push-push VCO has a phase noise of -126.30~-124.83 dBc/Hz at 100 kHz in the tuning range of 5.672~5.800 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.4 s.95
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• pp.345-350
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• 2005

An X-band push-push VCO for low cost applications is proposed. The designed push-push oscillator achieves a wide tuning range in the X-band by the collector bias tuning instead of extra varactor diodes. The measurement shows a wide tuning bandwidth of $900\;\cal{MHz}\;from\;10.9\;\cal{GHz}\;to\;11.8\;\cal{GHz}$ with a drain bias voltage varying from 4 to 9 V, excellent fudamental suppression of $-30\;\cal{dBc}$ and good phase noise of $-115\;\cal{dBc/Hz}\;@\;1\;\cal{MHz}$ offset.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.100-103
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• 2003

A Ku-band Push-push VCO for low cost applications is proposed. The proposed push-push oscillator achieves a wide tuning range in Ku-band by the collector bias tuning instead of extra varactor diodes. The measurement shows a wide tuning range of 900MHz, fundamental suppression of -30dBc and good phase noise of -115dBc@1MHz offset.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.12
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• pp.1236-1242
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• 2014

In this work, a D-band VCO(Voltage Controlled Oscillator) has been developed in a 65-nm CMOS technology. The circuit was designed based on push-push mechanism. The output oscillation frequency of the fabricated VCO varied from 152.7 GHz to 165.8 GHz, and the measured output power was from -17.3 dBm to -8.7 dBm. A phase noise of -90.9 dBc/Hz is achieved at 10 MHz offset. The chip size of the circuit is $470{\mu}m{\times}360{\mu}m$ including the probing pads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.207-212
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• 2012

In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.71-80
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• 2007

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.541-546
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• 2010

The push-push DRO(dielectric resonator oscillator) using a multi-layer structure of LTCC(low temperature co-fired ceramic) fabrication is designed. After the single DRO of series feedback type in the center frequency of 8GHz is designed, the push-push DRO in the center frequency of 16GHz including the Wilkinson power combiner is designed. The bias circuit affecting the size of oscillator are embedded in the intermediate layer of the LTCC multi-layer substrate. As a result, the large reduction in the size of VCO is obtained compared to the general oscillator on the single layer substrate. Experimental results show that the fundamental and third harmonics suppression are above 15dBc and 25dBc, respectively, and phase noise characteristics of the push-push DRO presents performance of -102dBc/Hz@100KHz and -128dBc/Hz@1MHz offset frequencies from carrier.

• 한국ITS학회:학술대회논문집
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• 2008.11a
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• pp.597-601
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• 2008