격리패턴을 지닌 결함접지구조를 이용한 초고주파용 능동공진기

Design of a Microwave Active Resonator Using Defected Ground Structure with Islands (DGSI)

  • 황문수 (순천향대학 전기통신시스템공학과) ;
  • 오성민 (순천향대학 전기통신시스템공학과) ;
  • 안달 (순천향대학 전기통신시스템공학과) ;
  • 임종식 (순천향대 전기통신시스템공학과)
  • 발행 : 2007.10.01

초록

A new active resonator using defected ground structure with islands (DGSI) is proposed. The proposed resonator is composed of the conventional microstrip line with DGSI and negative resistance of active devices. The negative resistance part is realized by field effect transistor (FET) series feedback circuits. The characteristic of the proposed resonator with DGSI is improved by combining the negative resistance part with the parallel microstrip line structure with islands, where the electric field is formed the most strongly. The measured improvement of the proposed active resonator with DGSI are 4.55dB and 0.32dB in S21 and S22, respectively, at the resonant frequency whorl it is compared to the existing passive resonator having DGSI only.

키워드

참고문헌

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