Journal of Magnetics

  • 제12권1호
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  • Pages.12-16
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  • 2007
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  • 1226-1750(pISSN)
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  • 2233-6656(eISSN)
한국자기학회 (The Korean Magnetics Society)
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Using Electron-beam Resists as Ion Milling Mask for Fabrication of Spin Transfer Devices

  • Nguyen Hoang Yen Thi (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Yi, Hyun-Jung (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Shin, Kyung-Ho (Nano Device Research Center, Korea Institute of Science and Technology)
  • 발행 : 2007.03.31
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초록

Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.

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참고문헌

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피인용 문헌

  1. Tendency of temperature on nano-pillar for spin transfer torque memory vol.204, pp.12, 2007, https://doi.org/10.1002/pssa.200777267
  2. Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties vol.45, pp.6, 2009, https://doi.org/10.1109/TMAG.2009.2018585