Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Formation of a Buffer Layer on Mica Substrate for Application to Flexible Thin Film Transistors

운모 기판을 플렉시블 다결정 실리콘 박막 트랜지스터에 적용하기 위한 버퍼층 형성 연구

  • Oh, Joon-Seok (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Lee, Seung-Ryul (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Lee, Jin-Ho (Electronics and Telecommunications Research Institute) ;
  • Ahn, Byung-Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • 오준석 (한국과학기술원 신소재공학과) ;
  • 이승렬 (한국과학기술원 신소재공학과) ;
  • 이진호 (한국전자통신연구원) ;
  • 안병태 (한국과학기술원 신소재공학과)
  • Published : 2007.02.27
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Abstract

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) might be fabricated on the mica substrate and transferred to a flexible plastic substrate because mica can be easily cleaved into a thin layer. To overcome the adhesion and stress problem between poly-Si film and mica substrate, a buffer layer consisting of $SiO_x/Ta/Ti$ three layers has been developed. The $SiO_x$ layer is for electrical isolation, the Ti layer is for adhesion of $SiO_{x}$ and mica. and Ta is for stress relief between $SiO_x$ and Ti. A TFT was fabricated on the mica substrate by a conventional Si process and was successfully transferred to a plastic substrate.

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References

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