Formation of a Buffer Layer on Mica Substrate for Application to Flexible Thin Film Transistors

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) might be fabricated on the mica substrate and transferred to a flexible plastic substrate because mica can be easily cleaved into a thin layer. To overcome the adhesion and stress problem between poly-Si film and mica substrate, a buffer layer consisting of $SiO_x/Ta/Ti$ three layers has been developed. The $SiO_x$ layer is for electrical isolation, the Ti layer is for adhesion of $SiO_{x}$ and mica. and Ta is for stress relief between $SiO_x$ and Ti. A TFT was fabricated on the mica substrate by a conventional Si process and was successfully transferred to a plastic substrate.

운모 기판을 플렉시블 다결정 실리콘 박막 트랜지스터에 적용하기 위한 버퍼층 형성 연구