JSTS:Journal of Semiconductor Technology and Science

  • 제7권2호
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  • Pages.120-131
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  • 2007
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Short Channel Analytical Model for High Electron Mobility Transistor to Obtain Higher Cut-Off Frequency Maintaining the Reliability of the Device

  • Gupta, Ritesh (Department of Electronic Science, University of Delhi South Campus) ;
  • Aggarwal, Sandeep Kumar (Department of Electronic Science, University of Delhi South Campus) ;
  • Gupta, Mridula (Department of Electronic Science, University of Delhi South Campus) ;
  • Gupta, R.S. (Department of Electronic Science, University of Delhi South Campus)
  • 발행 : 2007.06.30
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초록

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

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