ETRI Journal
- Volume 28 Issue 2
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- Pages.175-181
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- 2006
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
New CMOS Fully-Differential Transconductor and Application to a Fully-Differential Gm-C Filter
- Shaker, Mohamed O. (Department of Electronics and Communications, Cairo University) ;
- Mahmoud, Soliman A. (Department of Electronics and Communications, Cairo University) ;
- Soliman, Ahmed M. (Department of Electrical Engineering, Cairo University)
- Received : 2005.09.22
- Published : 2006.04.30
Abstract
A new CMOS voltage-controlled fully-differential transconductor is presented. The basic structure of the proposed transconductor is based on a four-MOS transistor cell operating in the triode or saturation region. It achieves a high linearity range of