Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Correlation between Leakage Current of Organic Treated Insulators and Grain Size of Pentacene Deposited film

유기물 처리 절연막의 누설전류 및 펜타센 증착 표면에 생긴 그레인 크기 사이의 상관관계

  • Oh Teresa (School of Electronics and Information Engineering, Cheongju University) ;
  • Kim Hong-Bae (School of Electronics and Information Engineering, Cheongju University) ;
  • Son Jae-Gu (School of Electronics and Information Engineering, Cheongju University)
  • 오데레사 (청주대학교 전자정보공학부) ;
  • 김홍배 (청주대학교 전자정보공학부) ;
  • 손재구 (청주대학교 전자정보공학부)
  • Published : 2006.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

The inspection of surface properties under n-octadecyltrichlorosilane treated $SiO_2$ film was carried out by current-voltage characteristic and the scanning electron microscope. The voltage at zero current in low electric field is the lowest at 0.3 % OTS treated $SiO_2$ film with hybrid type. $SiO_2$ films changed from inorganic to hybrid or organic properties according to the increase of OTS content. OTS treated $SiO_2$ films with hybrid properties decreased the leakage currents, and the grain size of pentacene deposited sample was also the most small at the hybrid properties. The perpendicular generation of pentacene molecular was related with the surface of insulators. The surface with hybrid properties decreased the grain size, but that with inorganic or organic properties increased the grain size.

묽은 n-octadecyltrichlorosilane를 여러 가지 비율로 섞어 만든 유기물에 따라 처리된 $SiO_2$ 절연막의 특성에 대하여 분석하고 펜타센 증착 표면에 생긴 그레인 크기 사이의 상관관계를 조사하였다. 전압-전류 특성 곡선에 의한 누설전류의 증가량이 유기물 처리 농도에 따라 비례적으로 증가하지 않았으며, 0.3 % 처리 농도에서 누설전류가 가장 작게 나타났다. 0.3 % 처리 농도의 $SiO_2$ 절연막은 유무기 복합적인 하이브리드 특성을 나타내고 있으며, 펜타센이 증착된 후 표면 사진에서 그레인 크기가 가장 작게 성장된 것을 확인하였다. 반면에 유기물 특성의 절연막 혹은 무기물 특성의 절연막 위에서 펜타신 물질이 증착후 그레인 크기는 점점 증가하였다.

Keywords

References

  1. T. C. Chang, P. T. Liu, Y. S. Mor, S. M. Sze, Y. L. Yang, M. S. Feng, F. M. Pan, B. T. Dai, C. Y. Chang, 'The Novel Improvement of Low Dielectric Constant Methylsilsesquioxane by N2O Plasma Treatment,'J. Electrochem. Soc., vol.146, pp.3802-3806, 1999 https://doi.org/10.1149/1.1392554
  2. Ioannis Kymissis, C. D. Dirnitrakopoulos and Sampath Purushothaman, 'High-Performance Bottom Electrode Organic Thin-Film Transistors,' IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.48, pp.1060-1064, 2001 https://doi.org/10.1109/16.925226
  3. D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson and D. G. Schlom, 'Pentacene Organic Thin-Film Transistors-Molecular Ordering and Mobility,' IEEE ELECTRON DEVICE LETTERS, 18, (1997) 87-89 https://doi.org/10.1109/55.556089
  4. Teresa Oh, 'Organic Thin Film Transistors Using Pentacene and SiOC film,' IEEE transactions on Nanotechnology, 5(2006) 23-29 https://doi.org/10.1109/TNANO.2005.858591
  5. T. Oh,' Generation of bonding structure due to organic carbon and organometallic carbon as a function of Gas source,' Jpn. J. Appl. Phys. Vol. 44, pp.4103-4107, 2005 https://doi.org/10.1143/JJAP.44.4103
  6. M. J. Kellicutt, I. S. Suzuki, C. R. Burr, M. Suzuki, M. Ohashi and M. S. Whittingham, 'Variable-range-hopping conduction and the Pool-Frankel effect in a copper polyaniline vermiculite intercalation compound,' Physical Review B. vol. 47, No. 20, pp.13664-13673, 1993, May https://doi.org/10.1103/PhysRevB.47.13664
  7. J. Frenkel, 'On pre-breakdown phenomena in insulators and electronic semiconductors,' Phys. Rev. 54, pp, 647-648, 1938 https://doi.org/10.1103/PhysRev.54.647
  8. P. R. Emtage and W. Tantraporn, 'Schottky emission through thin inslulating films,' Physical Review letters, Vol. 8, No.7, pp. 267-268, 1962 https://doi.org/10.1103/PhysRevLett.8.267
  9. J. G. Simmons, 'Pools-Frenkel Effect and Schottky in Metal-Insuloror-Metal Systems,' Physial Review, vol. 155, pp. 657-660, 1967 https://doi.org/10.1103/PhysRev.155.657
  10. C. A. Mead, 'Electron Transport Mechanism in Thin Insulating Films,' Physical Review, vol. 128, pp. 2088-2093, 1962 https://doi.org/10.1103/PhysRev.128.2088
  11. P. W. May, S. Hohn, W. N, Wang and N. A. Fox, 'Field emission conduction mechanisms in chemical vapor deposited diamond and diamondlike carbon films,' Appl. Phys. Lett. vol.27, pp. 2182-2184, 1998 https://doi.org/10.1063/1.121315